Direct contact of indium tin oxide layer to Al(Ni) alloy electrodes for a-Si:H thin film transistors: Effects of Ni alloying on interfacial oxide growth and contact resistance

Sputtering of indium tin oxide (ITO) on pure Al substrate produces an Al2O3 layer at the interface, leading to Schottky contact characteristics. A very small amount of Ni (2at.% Ni) added to Al drastically reduces the contact resistance of an ITO/Al(Ni) alloy electrode to approximately 4.3×10-4Ω-cm2...

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Veröffentlicht in:	Thin solid films 2013-11, Vol.546, p.9-13
Hauptverfasser:	Han, Dooman, Jeong, Kyunghoon, Nam, Ho-Seok, Lee, Konbae, Lee, Jaegab, Jeong, Chang-Oh, Bae, Yangho
Format:	Artikel
Sprache:	eng
Schlagworte:	Al(Ni) alloy Aluminum Aluminum base alloys Annealing Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact Contact resistance Contact resistance, contact potential Cross-disciplinary physics: materials science rheology Deposition by sputtering Electrodes Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Indium tin oxide ITO ITO/Al(Ni) alloy contacts low contact resistance Materials science Methods of deposition of films and coatings film growth and epitaxy Nickel Physics preferential oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sputtering TFTs Theory and models of film growth Thin films Transistors
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