Metal-Etching-Free Direct Delamination and Transfer of Single-Layer Graphene with a High Degree of Freedom
A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single‐layer graphene from a growth substrate, resulting i...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-01, Vol.11 (2), p.175-181 |
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| container_end_page | 181 |
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| container_issue | 2 |
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| container_title | Small (Weinheim an der Bergstrasse, Germany) |
| container_volume | 11 |
| creator | Yang, Sang Yoon Oh, Joong Gun Jung, Dae Yool Choi, HongKyw Yu, Chan Hak Shin, Jongwoo Choi, Choon-Gi Cho, Byung Jin Choi, Sung-Yool |
| description | A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single‐layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method. |
| doi_str_mv | 10.1002/smll.201401196 |
| format | Article |
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| subjects | Degrees of freedom Delaminating Delamination direct delamination Electric potential Etching Graphene graphene transistors Mathematical analysis metal etching Nanotechnology transfer printing Voltage |
| title | Metal-Etching-Free Direct Delamination and Transfer of Single-Layer Graphene with a High Degree of Freedom |
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