33.2: A New Process and Structure for Oxide Semiconductor LCDs

33.2: A New Process and Structure for Oxide Semiconductor LCDs

A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5‐...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.469-472
Hauptverfasser: Yang, Joon-Young, Lee, Sul, Cho, Seong-Joon, Jun, Myung-Chul, Kang, In-Byeong, Yeo, Sang Deog, Park, Jung-Ho
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Liquid crystal displays
Masks
Oxides
Semiconductor devices
Semiconductors
Thin film transistors
Transmittance
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container_end_page 472
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container_title SID International Symposium Digest of technical papers
container_volume 45
creator Yang, Joon-Young
Lee, Sul
Cho, Seong-Joon
Jun, Myung-Chul
Kang, In-Byeong
Yeo, Sang Deog
Park, Jung-Ho
description A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5‐inch HD resolution panel in our R&D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.
doi_str_mv 10.1002/j.2168-0159.2014.tb00122.x
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source Wiley Online Library Journals Frontfile Complete
subjects Channels
Liquid crystal displays
Masks
Oxides
Semiconductor devices
Semiconductors
Thin film transistors
Transmittance
title 33.2: A New Process and Structure for Oxide Semiconductor LCDs
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