Temperature dependent formation of ZnO and Zn2SiO4 nanoparticles by ion implantation and thermal annealing

ZnO and Zn2SiO4 nanoparticles have been synthesized by dual beam implantation of 45keV ZnO− molecular ions and 15keV O− ions into Si (100) substrates at room temperature to fluences of 1×1017 and 2×1017ions/cm2, respectively. Implanted samples were annealed at different temperatures in a mixture of...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2014-08, Vol.332, p.359-363
Hauptverfasser:	Pandey, B., Weathers, D.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Backscattering spectrometry Depth profile Diffusion Diffusion annealing Ion implantation Nanoparticles Silicon substrates X-rays Zinc Zinc oxide Zn2SiO4 ZnO
Online-Zugang:	Volltext
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