P.12: Development of Post-annealing Method for Flexible Oxide TFTs Application
Microwave annealing was used instead of furnace annealing to post‐treat a nitridated amorphous InGaZnO thin film transistor (a‐IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a‐IGZO:N TFT with microwave annealing process of 300s is well competitive...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.1026-1028 |
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| container_title | SID International Symposium Digest of technical papers |
| container_volume | 44 |
| creator | Fuh, Chur-Shyang Liu, Po-Tsun Teng, Li-Feng Fan, Yang-Shun Chang, Chih-Hsiang Wu, Yu-Ta Huang, Sih-Wei Shieh, Han-Ping D. |
| description | Microwave annealing was used instead of furnace annealing to post‐treat a nitridated amorphous InGaZnO thin film transistor (a‐IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a‐IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application. |
| doi_str_mv | 10.1002/j.2168-0159.2013.tb06397.x |
| format | Article |
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This performance of a‐IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/j.2168-0159.2013.tb06397.x</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0097-966X |
| ispartof | SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.1026-1028 |
| issn | 0097-966X 2168-0159 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Annealing Budgeting Furnaces Heating Microwaves Oxides Semiconductor devices Thin film transistors |
| title | P.12: Development of Post-annealing Method for Flexible Oxide TFTs Application |
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