Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface
In this work we systematically study the effect of the Al2O3 barrier layer thickness on the resistive switching properties of Al2O3/TiO2 bilayer grown by atomic layer deposition in the Pt/Al2O3/TiO2/TiN stacks. It was found that an Al2O3 layer of a certain thickness is essential to stabilize the res...
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| Veröffentlicht in: | Thin solid films 2014-07, Vol.563, p.10-14 |
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| creator | Hudec, B. Paskaleva, A. Jančovič, P. Dérer, J. Fedor, J. Rosová, A. Dobročka, E. Fröhlich, K. |
| description | In this work we systematically study the effect of the Al2O3 barrier layer thickness on the resistive switching properties of Al2O3/TiO2 bilayer grown by atomic layer deposition in the Pt/Al2O3/TiO2/TiN stacks. It was found that an Al2O3 layer of a certain thickness is essential to stabilize the resistive switching parameters while these can be further tuned by current compliance during SET. A two-step forming process was required to achieve stable repetitive bipolar switching loops. The endurance of 104 readings of alternating resistance states was obtained for structures with 3 and 4nm of Al2O3 during pulsed measurements. Forming was performed also at elevated temperatures using constant voltage stress. It was found that the switching is filamentary and happens in the Al2O3 layer while TiO2 is acting as an oxygen vacancy reservoir.
•Pt/Al2O3/TiO2/TiN bilayer structures were prepared using atomic layer deposition.•Two-step forming process led to stable repetitive bipolar resistive switching.•Switching parameters could be effectively tuned by current compliance during SET.•Endurance of 104 pulses was obtained for structures with 3 & 4nm of Al2O3.•Switching takes place in Al2O3 while TiO2 acts as an oxygen vacancy reservoir. |
| doi_str_mv | 10.1016/j.tsf.2014.02.030 |
| format | Article |
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•Pt/Al2O3/TiO2/TiN bilayer structures were prepared using atomic layer deposition.•Two-step forming process led to stable repetitive bipolar resistive switching.•Switching parameters could be effectively tuned by current compliance during SET.•Endurance of 104 pulses was obtained for structures with 3 & 4nm of Al2O3.•Switching takes place in Al2O3 while TiO2 acts as an oxygen vacancy reservoir.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2014.02.030</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Al2O3 ; Aluminum oxide ; Barrier ; Barrier layers ; Bilayer structure ; Condensed matter: structure, mechanical and thermal properties ; Constants ; Cross-disciplinary physics: materials science; rheology ; Current compliance ; Durability ; Electric potential ; Exact sciences and technology ; Forming ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; MIM ; Physics ; Resistive switching ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Switching ; Thin film structure and morphology ; TiO2 ; Titanium dioxide ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Thin solid films, 2014-07, Vol.563, p.10-14</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c430t-32489e40c59cda6a0dd6532d0619036f9924e7b166404e6fb5c4b1204cd4e44f3</citedby><cites>FETCH-LOGICAL-c430t-32489e40c59cda6a0dd6532d0619036f9924e7b166404e6fb5c4b1204cd4e44f3</cites><orcidid>0000-0001-6992-7697</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609014001655$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28575054$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hudec, B.</creatorcontrib><creatorcontrib>Paskaleva, A.</creatorcontrib><creatorcontrib>Jančovič, P.</creatorcontrib><creatorcontrib>Dérer, J.</creatorcontrib><creatorcontrib>Fedor, J.</creatorcontrib><creatorcontrib>Rosová, A.</creatorcontrib><creatorcontrib>Dobročka, E.</creatorcontrib><creatorcontrib>Fröhlich, K.</creatorcontrib><title>Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface</title><title>Thin solid films</title><description>In this work we systematically study the effect of the Al2O3 barrier layer thickness on the resistive switching properties of Al2O3/TiO2 bilayer grown by atomic layer deposition in the Pt/Al2O3/TiO2/TiN stacks. It was found that an Al2O3 layer of a certain thickness is essential to stabilize the resistive switching parameters while these can be further tuned by current compliance during SET. A two-step forming process was required to achieve stable repetitive bipolar switching loops. The endurance of 104 readings of alternating resistance states was obtained for structures with 3 and 4nm of Al2O3 during pulsed measurements. Forming was performed also at elevated temperatures using constant voltage stress. It was found that the switching is filamentary and happens in the Al2O3 layer while TiO2 is acting as an oxygen vacancy reservoir.
•Pt/Al2O3/TiO2/TiN bilayer structures were prepared using atomic layer deposition.•Two-step forming process led to stable repetitive bipolar resistive switching.•Switching parameters could be effectively tuned by current compliance during SET.•Endurance of 104 pulses was obtained for structures with 3 & 4nm of Al2O3.•Switching takes place in Al2O3 while TiO2 acts as an oxygen vacancy reservoir.</description><subject>Al2O3</subject><subject>Aluminum oxide</subject><subject>Barrier</subject><subject>Barrier layers</subject><subject>Bilayer structure</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Constants</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Current compliance</subject><subject>Durability</subject><subject>Electric potential</subject><subject>Exact sciences and technology</subject><subject>Forming</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>MIM</subject><subject>Physics</subject><subject>Resistive switching</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Switching</subject><subject>Thin film structure and morphology</subject><subject>TiO2</subject><subject>Titanium dioxide</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kM-KFDEQxoMoOK4-gLdcBC_dW_nT6Wk8LYurwsKArOeQTqqdDJnuNZVe2Zs-g2_ok5h1Fo9eqori-76ifoy9FtAKEOb80BaaWglCtyBbUPCEbcS2HxrZK_GUbQA0NAYGeM5eEB0AQEipNuznZ6RIJd4hp--x-H2cv_I485u4k83oCAM_YnHp949fcaY1ubLkOv_dcSp59WXNSLx69_wiyZ3io8s5YubJ3dfqCi97PIWch4gJfcnR1xsF8-Q8vmTPJpcIXz32M_bl6v3N5cfmevfh0-XFdeO1gtIoqbcDavDd4IMzDkIwnZIBjBhAmWkYpMZ-FMZo0GimsfN6FBK0Dxq1ntQZe3vKvc3LtxWp2GMkjym5GZeVbHUCdEpt-yoVJ6nPC1HGyd7meHT53gqwD7jtwVbc9gG3BWkr7up58xjvyLs0ZTf7SP-Mctv1HXS66t6ddFh_vaucLPmIs8cQc0VjwxL_c-UPPuiYQA</recordid><startdate>20140731</startdate><enddate>20140731</enddate><creator>Hudec, B.</creator><creator>Paskaleva, A.</creator><creator>Jančovič, P.</creator><creator>Dérer, J.</creator><creator>Fedor, J.</creator><creator>Rosová, A.</creator><creator>Dobročka, E.</creator><creator>Fröhlich, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6992-7697</orcidid></search><sort><creationdate>20140731</creationdate><title>Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface</title><author>Hudec, B. ; Paskaleva, A. ; Jančovič, P. ; Dérer, J. ; Fedor, J. ; Rosová, A. ; Dobročka, E. ; Fröhlich, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c430t-32489e40c59cda6a0dd6532d0619036f9924e7b166404e6fb5c4b1204cd4e44f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Al2O3</topic><topic>Aluminum oxide</topic><topic>Barrier</topic><topic>Barrier layers</topic><topic>Bilayer structure</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Constants</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Current compliance</topic><topic>Durability</topic><topic>Electric potential</topic><topic>Exact sciences and technology</topic><topic>Forming</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>MIM</topic><topic>Physics</topic><topic>Resistive switching</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Switching</topic><topic>Thin film structure and morphology</topic><topic>TiO2</topic><topic>Titanium dioxide</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hudec, B.</creatorcontrib><creatorcontrib>Paskaleva, A.</creatorcontrib><creatorcontrib>Jančovič, P.</creatorcontrib><creatorcontrib>Dérer, J.</creatorcontrib><creatorcontrib>Fedor, J.</creatorcontrib><creatorcontrib>Rosová, A.</creatorcontrib><creatorcontrib>Dobročka, E.</creatorcontrib><creatorcontrib>Fröhlich, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hudec, B.</au><au>Paskaleva, A.</au><au>Jančovič, P.</au><au>Dérer, J.</au><au>Fedor, J.</au><au>Rosová, A.</au><au>Dobročka, E.</au><au>Fröhlich, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface</atitle><jtitle>Thin solid films</jtitle><date>2014-07-31</date><risdate>2014</risdate><volume>563</volume><spage>10</spage><epage>14</epage><pages>10-14</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>In this work we systematically study the effect of the Al2O3 barrier layer thickness on the resistive switching properties of Al2O3/TiO2 bilayer grown by atomic layer deposition in the Pt/Al2O3/TiO2/TiN stacks. It was found that an Al2O3 layer of a certain thickness is essential to stabilize the resistive switching parameters while these can be further tuned by current compliance during SET. A two-step forming process was required to achieve stable repetitive bipolar switching loops. The endurance of 104 readings of alternating resistance states was obtained for structures with 3 and 4nm of Al2O3 during pulsed measurements. Forming was performed also at elevated temperatures using constant voltage stress. It was found that the switching is filamentary and happens in the Al2O3 layer while TiO2 is acting as an oxygen vacancy reservoir.
•Pt/Al2O3/TiO2/TiN bilayer structures were prepared using atomic layer deposition.•Two-step forming process led to stable repetitive bipolar resistive switching.•Switching parameters could be effectively tuned by current compliance during SET.•Endurance of 104 pulses was obtained for structures with 3 & 4nm of Al2O3.•Switching takes place in Al2O3 while TiO2 acts as an oxygen vacancy reservoir.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2014.02.030</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-6992-7697</orcidid></addata></record> |
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| subjects | Al2O3 Aluminum oxide Barrier Barrier layers Bilayer structure Condensed matter: structure, mechanical and thermal properties Constants Cross-disciplinary physics: materials science rheology Current compliance Durability Electric potential Exact sciences and technology Forming Materials science Methods of deposition of films and coatings film growth and epitaxy MIM Physics Resistive switching Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Switching Thin film structure and morphology TiO2 Titanium dioxide Vapor phase epitaxy growth from vapor phase |
| title | Resistive switching in TiO2-based metal–insulator–metal structures with Al2O3 barrier layer at the metal/dielectric interface |
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