Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells

The use of a Zn-based buffer layer for kesterite solar cells presents the double advantage of avoiding cadmium and reducing the amount of light absorbed in this layer. Cu2ZnSn(S,Se)4 solar cells with a ZnS(O,OH) buffer layer have been fabricated and power conversion efficiencies up to 5.8% after lig...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2014-08, Vol.564, p.375-378
Hauptverfasser: Grenet, Louis, Grondin, Pauline, Coumert, Karol, Karst, Nicolas, Emieux, Fabrice, Roux, Frédéric, Fillon, Raphaël, Altamura, Giovanni, Fournier, Hélène, Faucherand, Pascal, Perraud, Simon
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 378
container_issue
container_start_page 375
container_title Thin solid films
container_volume 564
creator Grenet, Louis
Grondin, Pauline
Coumert, Karol
Karst, Nicolas
Emieux, Fabrice
Roux, Frédéric
Fillon, Raphaël
Altamura, Giovanni
Fournier, Hélène
Faucherand, Pascal
Perraud, Simon
description The use of a Zn-based buffer layer for kesterite solar cells presents the double advantage of avoiding cadmium and reducing the amount of light absorbed in this layer. Cu2ZnSn(S,Se)4 solar cells with a ZnS(O,OH) buffer layer have been fabricated and power conversion efficiencies up to 5.8% after light soaking treatment have been measured. Cu2ZnSn(Se,S)4 solar cells with a CdS buffer layer have also been realized, leading to a power conversion efficiency up to 7.0%. The dynamics of the light soaking effect in the case of the ZnS(O,OH) buffer layer has been studied as well, and compared to the same effect on a cell with a Cu(In,Ga)Se2 absorber layer. •5.8% of efficiency for a Cu2ZnSn(S,Se)4 solar cell with a ZnS(O,OH) buffer layer•7.0% of efficiency for a reference Cu2ZnSn(S,Se)4 solar cell with a CdS buffer layer•ZnS(O,OH) buffer layer required at least 1000min of light soaking treatment.•Required light soaking treatment is longer for Cu2ZnSn(S,Se)4 than for Cu(In,Ga)Se2.
doi_str_mv 10.1016/j.tsf.2014.05.033
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1660053324</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609014005689</els_id><sourcerecordid>1660053324</sourcerecordid><originalsourceid>FETCH-LOGICAL-c275t-f0a2d540dd7361c512ccb1e332060e65753041d5ba564d0351a4ba78c2a19e183</originalsourceid><addsrcrecordid>eNp9kMFOGzEQhq2qSKS0D8DNF6RUYrcz9tqbqKcqCi0SEofAob1Yjj1OHZbd1N4g-vY4CuLIaS7f_8_Mx9g5Qo2A-tu2HnOoBWBTg6pByg9sgrN2XolW4kc2AWig0jCHU_Yp5y0AoBBywn4vn3eU4iP1o-04PUVPvSM-BN7Fzd-R58E-xH7DKQRyI489X_gqJCK-2Is__aqfri5X9LWp1jaTL3hnE3fUdfkzOwm2y_TldZ6x-6vl3eJXdXP783rx46ZyolVjFcAKrxrwvpUanULh3BpJSgEaSKtWSWjQq7VVuvEgFdpmbduZExbnhDN5xqbH3l0a_u0pj-Yx5sMFtqdhnw1qDaBKX1NQPKIuDTknCmZXXrfpv0EwB41ma4pGc9BoQJmisWQuXuttdrYLyfYu5regmGlApbBw348clV-fIiWTXTy49DEVc8YP8Z0tLxvghYU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1660053324</pqid></control><display><type>article</type><title>Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells</title><source>Access via ScienceDirect (Elsevier)</source><creator>Grenet, Louis ; Grondin, Pauline ; Coumert, Karol ; Karst, Nicolas ; Emieux, Fabrice ; Roux, Frédéric ; Fillon, Raphaël ; Altamura, Giovanni ; Fournier, Hélène ; Faucherand, Pascal ; Perraud, Simon</creator><creatorcontrib>Grenet, Louis ; Grondin, Pauline ; Coumert, Karol ; Karst, Nicolas ; Emieux, Fabrice ; Roux, Frédéric ; Fillon, Raphaël ; Altamura, Giovanni ; Fournier, Hélène ; Faucherand, Pascal ; Perraud, Simon</creatorcontrib><description>The use of a Zn-based buffer layer for kesterite solar cells presents the double advantage of avoiding cadmium and reducing the amount of light absorbed in this layer. Cu2ZnSn(S,Se)4 solar cells with a ZnS(O,OH) buffer layer have been fabricated and power conversion efficiencies up to 5.8% after light soaking treatment have been measured. Cu2ZnSn(Se,S)4 solar cells with a CdS buffer layer have also been realized, leading to a power conversion efficiency up to 7.0%. The dynamics of the light soaking effect in the case of the ZnS(O,OH) buffer layer has been studied as well, and compared to the same effect on a cell with a Cu(In,Ga)Se2 absorber layer. •5.8% of efficiency for a Cu2ZnSn(S,Se)4 solar cell with a ZnS(O,OH) buffer layer•7.0% of efficiency for a reference Cu2ZnSn(S,Se)4 solar cell with a CdS buffer layer•ZnS(O,OH) buffer layer required at least 1000min of light soaking treatment.•Required light soaking treatment is longer for Cu2ZnSn(S,Se)4 than for Cu(In,Ga)Se2.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2014.05.033</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Buffer layer ; Buffer layers ; Cadmium ; Copper zinc tin sulfur selenide ; Cross-disciplinary physics: materials science; rheology ; Dynamic tests ; Energy ; Energy conversion efficiency ; Exact sciences and technology ; Kesterite ; Light soaking ; Materials science ; Metastability ; Natural energy ; Other semiconductors ; Photovoltaic cells ; Photovoltaic conversion ; Physics ; Soaking ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Specific materials ; Thin films ; Zinc sulfide ; ZnS(O,OH)</subject><ispartof>Thin solid films, 2014-08, Vol.564, p.375-378</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c275t-f0a2d540dd7361c512ccb1e332060e65753041d5ba564d0351a4ba78c2a19e183</citedby><cites>FETCH-LOGICAL-c275t-f0a2d540dd7361c512ccb1e332060e65753041d5ba564d0351a4ba78c2a19e183</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2014.05.033$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=28601551$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Grenet, Louis</creatorcontrib><creatorcontrib>Grondin, Pauline</creatorcontrib><creatorcontrib>Coumert, Karol</creatorcontrib><creatorcontrib>Karst, Nicolas</creatorcontrib><creatorcontrib>Emieux, Fabrice</creatorcontrib><creatorcontrib>Roux, Frédéric</creatorcontrib><creatorcontrib>Fillon, Raphaël</creatorcontrib><creatorcontrib>Altamura, Giovanni</creatorcontrib><creatorcontrib>Fournier, Hélène</creatorcontrib><creatorcontrib>Faucherand, Pascal</creatorcontrib><creatorcontrib>Perraud, Simon</creatorcontrib><title>Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells</title><title>Thin solid films</title><description>The use of a Zn-based buffer layer for kesterite solar cells presents the double advantage of avoiding cadmium and reducing the amount of light absorbed in this layer. Cu2ZnSn(S,Se)4 solar cells with a ZnS(O,OH) buffer layer have been fabricated and power conversion efficiencies up to 5.8% after light soaking treatment have been measured. Cu2ZnSn(Se,S)4 solar cells with a CdS buffer layer have also been realized, leading to a power conversion efficiency up to 7.0%. The dynamics of the light soaking effect in the case of the ZnS(O,OH) buffer layer has been studied as well, and compared to the same effect on a cell with a Cu(In,Ga)Se2 absorber layer. •5.8% of efficiency for a Cu2ZnSn(S,Se)4 solar cell with a ZnS(O,OH) buffer layer•7.0% of efficiency for a reference Cu2ZnSn(S,Se)4 solar cell with a CdS buffer layer•ZnS(O,OH) buffer layer required at least 1000min of light soaking treatment.•Required light soaking treatment is longer for Cu2ZnSn(S,Se)4 than for Cu(In,Ga)Se2.</description><subject>Applied sciences</subject><subject>Buffer layer</subject><subject>Buffer layers</subject><subject>Cadmium</subject><subject>Copper zinc tin sulfur selenide</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Dynamic tests</subject><subject>Energy</subject><subject>Energy conversion efficiency</subject><subject>Exact sciences and technology</subject><subject>Kesterite</subject><subject>Light soaking</subject><subject>Materials science</subject><subject>Metastability</subject><subject>Natural energy</subject><subject>Other semiconductors</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Soaking</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Specific materials</subject><subject>Thin films</subject><subject>Zinc sulfide</subject><subject>ZnS(O,OH)</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kMFOGzEQhq2qSKS0D8DNF6RUYrcz9tqbqKcqCi0SEofAob1Yjj1OHZbd1N4g-vY4CuLIaS7f_8_Mx9g5Qo2A-tu2HnOoBWBTg6pByg9sgrN2XolW4kc2AWig0jCHU_Yp5y0AoBBywn4vn3eU4iP1o-04PUVPvSM-BN7Fzd-R58E-xH7DKQRyI489X_gqJCK-2Is__aqfri5X9LWp1jaTL3hnE3fUdfkzOwm2y_TldZ6x-6vl3eJXdXP783rx46ZyolVjFcAKrxrwvpUanULh3BpJSgEaSKtWSWjQq7VVuvEgFdpmbduZExbnhDN5xqbH3l0a_u0pj-Yx5sMFtqdhnw1qDaBKX1NQPKIuDTknCmZXXrfpv0EwB41ma4pGc9BoQJmisWQuXuttdrYLyfYu5regmGlApbBw348clV-fIiWTXTy49DEVc8YP8Z0tLxvghYU</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>Grenet, Louis</creator><creator>Grondin, Pauline</creator><creator>Coumert, Karol</creator><creator>Karst, Nicolas</creator><creator>Emieux, Fabrice</creator><creator>Roux, Frédéric</creator><creator>Fillon, Raphaël</creator><creator>Altamura, Giovanni</creator><creator>Fournier, Hélène</creator><creator>Faucherand, Pascal</creator><creator>Perraud, Simon</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140801</creationdate><title>Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells</title><author>Grenet, Louis ; Grondin, Pauline ; Coumert, Karol ; Karst, Nicolas ; Emieux, Fabrice ; Roux, Frédéric ; Fillon, Raphaël ; Altamura, Giovanni ; Fournier, Hélène ; Faucherand, Pascal ; Perraud, Simon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c275t-f0a2d540dd7361c512ccb1e332060e65753041d5ba564d0351a4ba78c2a19e183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Buffer layer</topic><topic>Buffer layers</topic><topic>Cadmium</topic><topic>Copper zinc tin sulfur selenide</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Dynamic tests</topic><topic>Energy</topic><topic>Energy conversion efficiency</topic><topic>Exact sciences and technology</topic><topic>Kesterite</topic><topic>Light soaking</topic><topic>Materials science</topic><topic>Metastability</topic><topic>Natural energy</topic><topic>Other semiconductors</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Soaking</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Specific materials</topic><topic>Thin films</topic><topic>Zinc sulfide</topic><topic>ZnS(O,OH)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grenet, Louis</creatorcontrib><creatorcontrib>Grondin, Pauline</creatorcontrib><creatorcontrib>Coumert, Karol</creatorcontrib><creatorcontrib>Karst, Nicolas</creatorcontrib><creatorcontrib>Emieux, Fabrice</creatorcontrib><creatorcontrib>Roux, Frédéric</creatorcontrib><creatorcontrib>Fillon, Raphaël</creatorcontrib><creatorcontrib>Altamura, Giovanni</creatorcontrib><creatorcontrib>Fournier, Hélène</creatorcontrib><creatorcontrib>Faucherand, Pascal</creatorcontrib><creatorcontrib>Perraud, Simon</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Grenet, Louis</au><au>Grondin, Pauline</au><au>Coumert, Karol</au><au>Karst, Nicolas</au><au>Emieux, Fabrice</au><au>Roux, Frédéric</au><au>Fillon, Raphaël</au><au>Altamura, Giovanni</au><au>Fournier, Hélène</au><au>Faucherand, Pascal</au><au>Perraud, Simon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells</atitle><jtitle>Thin solid films</jtitle><date>2014-08-01</date><risdate>2014</risdate><volume>564</volume><spage>375</spage><epage>378</epage><pages>375-378</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The use of a Zn-based buffer layer for kesterite solar cells presents the double advantage of avoiding cadmium and reducing the amount of light absorbed in this layer. Cu2ZnSn(S,Se)4 solar cells with a ZnS(O,OH) buffer layer have been fabricated and power conversion efficiencies up to 5.8% after light soaking treatment have been measured. Cu2ZnSn(Se,S)4 solar cells with a CdS buffer layer have also been realized, leading to a power conversion efficiency up to 7.0%. The dynamics of the light soaking effect in the case of the ZnS(O,OH) buffer layer has been studied as well, and compared to the same effect on a cell with a Cu(In,Ga)Se2 absorber layer. •5.8% of efficiency for a Cu2ZnSn(S,Se)4 solar cell with a ZnS(O,OH) buffer layer•7.0% of efficiency for a reference Cu2ZnSn(S,Se)4 solar cell with a CdS buffer layer•ZnS(O,OH) buffer layer required at least 1000min of light soaking treatment.•Required light soaking treatment is longer for Cu2ZnSn(S,Se)4 than for Cu(In,Ga)Se2.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2014.05.033</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0040-6090
ispartof Thin solid films, 2014-08, Vol.564, p.375-378
issn 0040-6090
1879-2731
language eng
recordid cdi_proquest_miscellaneous_1660053324
source Access via ScienceDirect (Elsevier)
subjects Applied sciences
Buffer layer
Buffer layers
Cadmium
Copper zinc tin sulfur selenide
Cross-disciplinary physics: materials science
rheology
Dynamic tests
Energy
Energy conversion efficiency
Exact sciences and technology
Kesterite
Light soaking
Materials science
Metastability
Natural energy
Other semiconductors
Photovoltaic cells
Photovoltaic conversion
Physics
Soaking
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Specific materials
Thin films
Zinc sulfide
ZnS(O,OH)
title Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T20%3A39%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Experimental%20evidence%20of%20light%20soaking%20effect%20in%20Cd-free%20Cu2ZnSn(S,Se)4-based%20solar%20cells&rft.jtitle=Thin%20solid%20films&rft.au=Grenet,%20Louis&rft.date=2014-08-01&rft.volume=564&rft.spage=375&rft.epage=378&rft.pages=375-378&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2014.05.033&rft_dat=%3Cproquest_cross%3E1660053324%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1660053324&rft_id=info:pmid/&rft_els_id=S0040609014005689&rfr_iscdi=true