Epitaxial growth of cerium oxide thin films by pulsed laser deposition
The epitaxial cerium oxide (CeO2) thin films were deposited on yttria stabilized zirconia (YSZ) (100) substrates at various substrate temperatures (673–973 K), energy densities (1–5 J/cm2) and repetition rates (5–30 Hz) with an optimized oxygen partial pressure of 3 Pa, by pulsed laser deposition te...
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| Veröffentlicht in: | Thin solid films 2013-11, Vol.546, p.467-471 |
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| creator | Balakrishnan, G. Sudhakara, P. Wasy, Abdul Ho, Ha Sun Shin, K.S. Song, J.I. |
| description | The epitaxial cerium oxide (CeO2) thin films were deposited on yttria stabilized zirconia (YSZ) (100) substrates at various substrate temperatures (673–973 K), energy densities (1–5 J/cm2) and repetition rates (5–30 Hz) with an optimized oxygen partial pressure of 3 Pa, by pulsed laser deposition technique. The films were characterized by X-ray diffraction and atomic force microscopy to study the influence of substrate temperature, laser fluence and repetition rate on epitaxy, growth mode and surface morphology. The X-ray diffraction studies revealed the epitaxial nature of CeO2 (200) films on yttria stabilized zirconia (100) substrate (CeO2 (200) ‖ YSZ (100)) deposited in the temperature range 673–973 K. The films prepared at low energy densities (1–3 J/cm2) and low repetition rates (1–25 Hz) also indicated the fully epitaxial nature, whereas the films prepared at higher energy density (≥ 4 J/cm2) and repetition rate (30 Hz) indicated deviation from epitaxy. The atomic force microscopy studies showed the formation of dense and uniform nanocrystallites with smooth morphology. The root mean square surface roughness of the films increased with the increase of substrate temperature, increase of energy density and repetition rate.
•Films deposited at an optimized pressure 3×10−2 mbar for stoichiometric.•At a low temperature of 673 K itself, epitaxial CeO2 films are formed.•Influences of repetition rate and fluence on epitaxy are studied systematically•Growth mode and surface morphology are studied systematically |
| doi_str_mv | 10.1016/j.tsf.2013.06.048 |
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•Films deposited at an optimized pressure 3×10−2 mbar for stoichiometric.•At a low temperature of 673 K itself, epitaxial CeO2 films are formed.•Influences of repetition rate and fluence on epitaxy are studied systematically•Growth mode and surface morphology are studied systematically</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2013.06.048</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Atomic force microscopy ; Cerium oxide ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Diffraction ; Energy density ; Epitaxial ; Epitaxy ; Exact sciences and technology ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Morphology ; Nanoscale materials and structures: fabrication and characterization ; Other topics in nanoscale materials and structures ; Physics ; Pulsed laser deposition ; Repetition ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Thin films ; X-ray diffraction ; Yttria stabilized zirconia</subject><ispartof>Thin solid films, 2013-11, Vol.546, p.467-471</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-e299de6060d584bf5ef3099d53b62842d6fdd3605a9a25fe53d73eb53b0b7d833</citedby><cites>FETCH-LOGICAL-c360t-e299de6060d584bf5ef3099d53b62842d6fdd3605a9a25fe53d73eb53b0b7d833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2013.06.048$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27875302$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Balakrishnan, G.</creatorcontrib><creatorcontrib>Sudhakara, P.</creatorcontrib><creatorcontrib>Wasy, Abdul</creatorcontrib><creatorcontrib>Ho, Ha Sun</creatorcontrib><creatorcontrib>Shin, K.S.</creatorcontrib><creatorcontrib>Song, J.I.</creatorcontrib><title>Epitaxial growth of cerium oxide thin films by pulsed laser deposition</title><title>Thin solid films</title><description>The epitaxial cerium oxide (CeO2) thin films were deposited on yttria stabilized zirconia (YSZ) (100) substrates at various substrate temperatures (673–973 K), energy densities (1–5 J/cm2) and repetition rates (5–30 Hz) with an optimized oxygen partial pressure of 3 Pa, by pulsed laser deposition technique. The films were characterized by X-ray diffraction and atomic force microscopy to study the influence of substrate temperature, laser fluence and repetition rate on epitaxy, growth mode and surface morphology. The X-ray diffraction studies revealed the epitaxial nature of CeO2 (200) films on yttria stabilized zirconia (100) substrate (CeO2 (200) ‖ YSZ (100)) deposited in the temperature range 673–973 K. The films prepared at low energy densities (1–3 J/cm2) and low repetition rates (1–25 Hz) also indicated the fully epitaxial nature, whereas the films prepared at higher energy density (≥ 4 J/cm2) and repetition rate (30 Hz) indicated deviation from epitaxy. The atomic force microscopy studies showed the formation of dense and uniform nanocrystallites with smooth morphology. The root mean square surface roughness of the films increased with the increase of substrate temperature, increase of energy density and repetition rate.
•Films deposited at an optimized pressure 3×10−2 mbar for stoichiometric.•At a low temperature of 673 K itself, epitaxial CeO2 films are formed.•Influences of repetition rate and fluence on epitaxy are studied systematically•Growth mode and surface morphology are studied systematically</description><subject>Atomic force microscopy</subject><subject>Cerium oxide</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Diffraction</subject><subject>Energy density</subject><subject>Epitaxial</subject><subject>Epitaxy</subject><subject>Exact sciences and technology</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Morphology</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Pulsed laser deposition</subject><subject>Repetition</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>X-ray diffraction</subject><subject>Yttria stabilized zirconia</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LxDAQxYMouP75AN5yEby0TpI2bfEk4qogeNFzSJOJZuk2Nemq--2NrHj0NDDv994wj5AzBiUDJi9X5ZxcyYGJEmQJVbtHFqxtuoI3gu2TBUAFhYQODslRSisAYJyLBVneTn7WX14P9DWGz_mNBkcNRr9Z0_DlLdL5zY_U-WGdaL-l02ZIaOmgE0ZqcQrJzz6MJ-TA6ayc_s5j8rK8fb65Lx6f7h5urh8LIyTMBfKusyhBgq3bqnc1OgF5VYte8rbiVjprM1nrTvPaYS1sI7DPMvSNbYU4Jhe73CmG9w2mWa19MjgMesSwSYpJCVADq6qMsh1qYkgpolNT9Gsdt4qB-ulMrVTuTP10pkCq3Fn2nP_G62T04KIejU9_Rt60TS2AZ-5qx2H-9cNjVMl4HA1aH9HMygb_z5Vvv1GBOA</recordid><startdate>20131101</startdate><enddate>20131101</enddate><creator>Balakrishnan, G.</creator><creator>Sudhakara, P.</creator><creator>Wasy, Abdul</creator><creator>Ho, Ha Sun</creator><creator>Shin, K.S.</creator><creator>Song, J.I.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131101</creationdate><title>Epitaxial growth of cerium oxide thin films by pulsed laser deposition</title><author>Balakrishnan, G. ; Sudhakara, P. ; Wasy, Abdul ; Ho, Ha Sun ; Shin, K.S. ; Song, J.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-e299de6060d584bf5ef3099d53b62842d6fdd3605a9a25fe53d73eb53b0b7d833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Atomic force microscopy</topic><topic>Cerium oxide</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Diffraction</topic><topic>Energy density</topic><topic>Epitaxial</topic><topic>Epitaxy</topic><topic>Exact sciences and technology</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Morphology</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Pulsed laser deposition</topic><topic>Repetition</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>X-ray diffraction</topic><topic>Yttria stabilized zirconia</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Balakrishnan, G.</creatorcontrib><creatorcontrib>Sudhakara, P.</creatorcontrib><creatorcontrib>Wasy, Abdul</creatorcontrib><creatorcontrib>Ho, Ha Sun</creatorcontrib><creatorcontrib>Shin, K.S.</creatorcontrib><creatorcontrib>Song, J.I.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Balakrishnan, G.</au><au>Sudhakara, P.</au><au>Wasy, Abdul</au><au>Ho, Ha Sun</au><au>Shin, K.S.</au><au>Song, J.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of cerium oxide thin films by pulsed laser deposition</atitle><jtitle>Thin solid films</jtitle><date>2013-11-01</date><risdate>2013</risdate><volume>546</volume><spage>467</spage><epage>471</epage><pages>467-471</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The epitaxial cerium oxide (CeO2) thin films were deposited on yttria stabilized zirconia (YSZ) (100) substrates at various substrate temperatures (673–973 K), energy densities (1–5 J/cm2) and repetition rates (5–30 Hz) with an optimized oxygen partial pressure of 3 Pa, by pulsed laser deposition technique. The films were characterized by X-ray diffraction and atomic force microscopy to study the influence of substrate temperature, laser fluence and repetition rate on epitaxy, growth mode and surface morphology. The X-ray diffraction studies revealed the epitaxial nature of CeO2 (200) films on yttria stabilized zirconia (100) substrate (CeO2 (200) ‖ YSZ (100)) deposited in the temperature range 673–973 K. The films prepared at low energy densities (1–3 J/cm2) and low repetition rates (1–25 Hz) also indicated the fully epitaxial nature, whereas the films prepared at higher energy density (≥ 4 J/cm2) and repetition rate (30 Hz) indicated deviation from epitaxy. The atomic force microscopy studies showed the formation of dense and uniform nanocrystallites with smooth morphology. The root mean square surface roughness of the films increased with the increase of substrate temperature, increase of energy density and repetition rate.
•Films deposited at an optimized pressure 3×10−2 mbar for stoichiometric.•At a low temperature of 673 K itself, epitaxial CeO2 films are formed.•Influences of repetition rate and fluence on epitaxy are studied systematically•Growth mode and surface morphology are studied systematically</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2013.06.048</doi><tpages>5</tpages></addata></record> |
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| subjects | Atomic force microscopy Cerium oxide Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Diffraction Energy density Epitaxial Epitaxy Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Morphology Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Pulsed laser deposition Repetition Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Thin films X-ray diffraction Yttria stabilized zirconia |
| title | Epitaxial growth of cerium oxide thin films by pulsed laser deposition |
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