Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the ver...

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Veröffentlicht in:Chinese physics letters 2014-02, Vol.31 (2), p.97-100, Article 27101
1. Verfasser: 王东盛 张克雄 梁红伟 宋世巍 杨德超 申人升 柳阳 夏晓川 骆英民 杜国同
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Sprache:eng
Schlagworte:
AlGaN
Chemical vapor deposition
Electroluminescence
Electronics
Indium gallium nitrides
InGaN
LED灯
Light-emitting diodes
Microscopes
Photons
Scanning
扫描电子显微镜
紫外发光二极管
输出功率
金属有机物化学气相沉积
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container_title Chinese physics letters
container_volume 31
creator 王东盛 张克雄 梁红伟 宋世巍 杨德超 申人升 柳阳 夏晓川 骆英民 杜国同
description Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.
doi_str_mv 10.1088/0256-307X/31/2/027101
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subjects AlGaN
Chemical vapor deposition
Electroluminescence
Electronics
Indium gallium nitrides
InGaN
LED灯
Light-emitting diodes
Microscopes
Photons
Scanning
扫描电子显微镜
紫外发光二极管
输出功率
金属有机物化学气相沉积
title Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods
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