Synthesis and Photoluminescence Properties of GaAs Nanowires Grown on Fused Quartz Substrates
GaAs nanowires are synthesized on fused quartz substrates by using molecular beam epitaxy via a vapor-liquidsolid mechanism with gold as the catalyst. High resolution-transmission electron microscopy is used to probe crystal quality and growth direction. Miero-photolumineseenee measurements are carr...
Gespeichert in:
Veröffentlicht in: | Chinese physics letters 2014-05, Vol.31 (5), p.100-103 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | GaAs nanowires are synthesized on fused quartz substrates by using molecular beam epitaxy via a vapor-liquidsolid mechanism with gold as the catalyst. High resolution-transmission electron microscopy is used to probe crystal quality and growth direction. Miero-photolumineseenee measurements are carried out to examine the optical properties of GaAs NWs. The low-temperature photoluminescenee (PL) emission of nanowires (NWs) has a peak at 1.513eV, 2meV lower than the zinc blende GaAs free exciton energy. The temperature-dependent band gap of NWs is seen to be somewhat different from that observed in bulk OaAs, and the PL rapidly quenches above 150K, with an activation energy of 6.3meV reflecting the presence of the longitudinal twins' structure. |
---|---|
ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/31/5/056101 |