Evolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method
In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with d...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2015-03, Vol.27 (9), p.095301-095301 |
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| container_end_page | 095301 |
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| container_issue | 9 |
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| container_title | Journal of physics. Condensed matter |
| container_volume | 27 |
| creator | Aragón, F H Coaquira, J A H Villegas-Lelovsky, L da Silva, S W Cesar, D F Nagamine, L C C M Cohen, R Menéndez-Proupin, E Morais, P C |
| description | In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al+3 and Sn4+-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations. |
| doi_str_mv | 10.1088/0953-8984/27/9/095301 |
| format | Article |
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The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al+3 and Sn4+-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. 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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | doped oxide semiconductor interstitial position substitutional position |
| title | Evolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method |
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