Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature I on/I off of 105. Many devices were studied with a maximum intrinsic mobility of 12 cm2·V–1·s–1 at room tempe...

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Veröffentlicht in:	ACS nano 2015-01, Vol.9 (1), p.363-370
Hauptverfasser:	Corbet, Chris M, McClellan, Connor, Rai, Amritesh, Sonde, Sushant Sudam, Tutuc, Emanuel, Banerjee, Sanjay K
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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