Tunability of Short-Channel Effects in MoS2 Field-Effect Devices
MoS2 transistors have been electrically characterized and analyzed in terms of their vulnerability to short channel effects and their response to various environments. We find that the electrical performance of MoS2 flakes is governed by an unexpected dependence on the effective body thickness of th...
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| Veröffentlicht in: | Nano letters 2015-01, Vol.15 (1), p.301-306 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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