Highly Effective Field-Effect Mobility Amorphous InGaZnO TFT Mediated by Directional Silver Nanowire Arrays

In this work, we demonstrate sputtered amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm2/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ACS applied materials & interfaces 2015-01, Vol.7 (1), p.232-240
Hauptverfasser:	Liu, Hung-Chuan, Lai, Yi-Chun, Lai, Chih-Chung, Wu, Bing-Shu, Zan, Hsiao-Wen, Yu, Peichen, Chueh, Yu-Lun, Tsai, Chuang-Chuang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!