Modeling the back gate effects of AlGaN/GaN HEMTs

This letter reports the design and simulation of novel AlGaN/GaN double-gate high electron mobility transistors (DG HEMTs) featuring enhanced back gate-control of the two dimensional electron gas in AlGaN/GaN heterostructures. A comparison study was carried out to reveal the difference between the p...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of computational electronics 2014-12, Vol.13 (4), p.872-876
Hauptverfasser:	Wang, Li, Zhang, Xuefeng, You, Guanjun, Xiong, Feng, Liang, Lixin, Hu, Yong, Chen, Aping, Liu, Jie, Xu, Jian
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Channels Computer simulation Devices Electrical Engineering Electron gas Engineering Gallium nitrides Heterostructures High electron mobility transistors Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Numerical analysis Optical and Electronic Materials Semiconductor devices Simulation Theoretical Transconductance Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!