Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction
We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-o...
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| Veröffentlicht in: | Optics communications 2015-02, Vol.336, p.1-4 |
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| container_title | Optics communications |
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| creator | Zhao, Yang Wang, Hui Wu, Chao Li, Wancheng Gao, Fubin Wu, Guoguang Zhang, Baolin Du, Guotong |
| description | We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 6.8V. Under forward bias, a prominent broad emission peaked around 400–650nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction. |
| doi_str_mv | 10.1016/j.optcom.2014.09.021 |
| format | Article |
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The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 6.8V. Under forward bias, a prominent broad emission peaked around 400–650nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495nm corresponding to the violet and green luminescence, respectively. 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The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 6.8V. Under forward bias, a prominent broad emission peaked around 400–650nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction.</description><subject>Chemical vapor deposition</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electroluminescence</subject><subject>Heterojunctions</subject><subject>Light emission</subject><subject>Magnetron sputtering</subject><subject>MOCVD</subject><subject>NiO</subject><subject>Radio frequencies</subject><subject>ZnO</subject><issn>0030-4018</issn><issn>1873-0310</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kDtPxDAQhC0EEsfBP6BISZPcbuI83CChEy8JQXHQUGAFeyN8ysXBdpDu3-PoqGl2t5gZzX6MXSJkCFittpkdg7K7LAfkGYgMcjxiC2zqIoUC4ZgtAApIOWBzys683wJEZdEs2McmTHqf2CEJX5RQTyo42087M5BXNChKRmdHcsGQT2yXaGN1vD5bT3p2Den78LIa02czz41JviiQs9tpUMHY4ZyddG3v6eJvL9nb3e3r-iF9erl_XN88pYpDGVIssaGCN1iKutIaugoaqj-LrlZc5xzbqqlbIXIhQGBLddfVGkQpOlI1r7AsluzqkBvbfk_kg9yZ2L_v24Hs5CVWJXJeIhRRyg9S5az3jjo5OrNr3V4iyBmn3MoDTjnjlCBkxBlt1wcbxTd-DDnplZkBaeMiNKmt-T_gF8DEf98</recordid><startdate>20150201</startdate><enddate>20150201</enddate><creator>Zhao, Yang</creator><creator>Wang, Hui</creator><creator>Wu, Chao</creator><creator>Li, Wancheng</creator><creator>Gao, Fubin</creator><creator>Wu, Guoguang</creator><creator>Zhang, Baolin</creator><creator>Du, Guotong</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150201</creationdate><title>Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction</title><author>Zhao, Yang ; Wang, Hui ; Wu, Chao ; Li, Wancheng ; Gao, Fubin ; Wu, Guoguang ; Zhang, Baolin ; Du, Guotong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-1518e34815976dd0f608e7b3f7c4d241a687a99299091ae7ff7d0959fec746153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Chemical vapor deposition</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Electroluminescence</topic><topic>Heterojunctions</topic><topic>Light emission</topic><topic>Magnetron sputtering</topic><topic>MOCVD</topic><topic>NiO</topic><topic>Radio frequencies</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Yang</creatorcontrib><creatorcontrib>Wang, Hui</creatorcontrib><creatorcontrib>Wu, Chao</creatorcontrib><creatorcontrib>Li, Wancheng</creatorcontrib><creatorcontrib>Gao, Fubin</creatorcontrib><creatorcontrib>Wu, Guoguang</creatorcontrib><creatorcontrib>Zhang, Baolin</creatorcontrib><creatorcontrib>Du, Guotong</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optics communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Yang</au><au>Wang, Hui</au><au>Wu, Chao</au><au>Li, Wancheng</au><au>Gao, Fubin</au><au>Wu, Guoguang</au><au>Zhang, Baolin</au><au>Du, Guotong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction</atitle><jtitle>Optics communications</jtitle><date>2015-02-01</date><risdate>2015</risdate><volume>336</volume><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0030-4018</issn><eissn>1873-0310</eissn><abstract>We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 6.8V. Under forward bias, a prominent broad emission peaked around 400–650nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.optcom.2014.09.021</doi><tpages>4</tpages></addata></record> |
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| subjects | Chemical vapor deposition Devices Electric potential Electroluminescence Heterojunctions Light emission Magnetron sputtering MOCVD NiO Radio frequencies ZnO |
| title | Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction |
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