Mid-infrared Type-II InAs/GaSb Superlattice Photodiodes Fabricated on InP Substrates

Type-II InAs/GaSb superlattices (SLs) are attractive material systems for mid-infrared photodiodes (PDs) with higher detectivities than the conventional HgCdTe. GaSb substrates are generally used for the epitaxial growth of these type-II SLs. However, in the case of back-illuminated PDs, the GaSb su...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Sensors and materials 2014, Vol.26 (4), p.245-251
Hauptverfasser:	Miura, Kohei, Iguchi, Yasuhiro, Katsuyama, Tsukuru, Kawamura, Yuichi, Murooka, Junpei, Katayama, Haruyoshi, Sugano, Shota, Takekawa, Tomoko, Kimata, Masafumi
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium compounds Density Indium arsenides Indium phosphides Infrared Photodiodes Superlattices Wavelengths
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!