Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.309-312
Hauptverfasser:	O'Loughlin, Michael J., Stahlbush, Robert E., Mahadik, Nadeemullah A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Basal plane Dislocations Drift Epitaxial growth Epitaxy Glide Inclusions Migration
Online-Zugang:	Volltext
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