Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy
Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the...
Gespeichert in:
Veröffentlicht in: | Materials science forum 2014-02, Vol.778-780, p.309-312 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 312 |
---|---|
container_issue | |
container_start_page | 309 |
container_title | Materials science forum |
container_volume | 778-780 |
creator | O'Loughlin, Michael J. Stahlbush, Robert E. Mahadik, Nadeemullah A. |
description | Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed. |
doi_str_mv | 10.4028/www.scientific.net/MSF.778-780.309 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1651428406</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1651428406</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</originalsourceid><addsrcrecordid>eNqV0F1LwzAUBuAgCs7pf-ilCO3y1ST1zs3NDSYK0-uQZilmdOlMUub-vZkTvPbqcODl5ZwHgDsECwqxGO33-yJoa1y0jdWFM3H0vJoVnIucC1gQWJ2BAWIM5xUv8TkYQFyWeUk5uwRXIWwgJEggNgD3YxVUm722ypns0Ya20yrazoWs8d02Wzjd9uFnty6j83xlJ9l0Z6P6OlyDi0a1wdz8ziF4n03fJvN8-fK0mDwsc004iTlXSGhkuCF0va6ErngFtUDc1KRuEOOIKqPxGpWmNrRhlFakJlDVrMYVYxqTIbg99e5899mbEOXWBm3a48ldHyRiJaJYUMhSdHyKat-F4E0jd95ulT9IBOURTiY4-QcnE5xMcDLByQQnE1wqeTyVRK9ciEZ_yE3Xe5d-_E_NN1nagGM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1651428406</pqid></control><display><type>article</type><title>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</title><source>Scientific.net Journals</source><creator>O'Loughlin, Michael J. ; Stahlbush, Robert E. ; Mahadik, Nadeemullah A.</creator><creatorcontrib>O'Loughlin, Michael J. ; Stahlbush, Robert E. ; Mahadik, Nadeemullah A.</creatorcontrib><description>Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.778-780.309</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>Basal plane ; Dislocations ; Drift ; Epitaxial growth ; Epitaxy ; Glide ; Inclusions ; Migration</subject><ispartof>Materials science forum, 2014-02, Vol.778-780, p.309-312</ispartof><rights>2014 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</citedby><cites>FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/2984?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>O'Loughlin, Michael J.</creatorcontrib><creatorcontrib>Stahlbush, Robert E.</creatorcontrib><creatorcontrib>Mahadik, Nadeemullah A.</creatorcontrib><title>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</title><title>Materials science forum</title><description>Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.</description><subject>Basal plane</subject><subject>Dislocations</subject><subject>Drift</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Glide</subject><subject>Inclusions</subject><subject>Migration</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqV0F1LwzAUBuAgCs7pf-ilCO3y1ST1zs3NDSYK0-uQZilmdOlMUub-vZkTvPbqcODl5ZwHgDsECwqxGO33-yJoa1y0jdWFM3H0vJoVnIucC1gQWJ2BAWIM5xUv8TkYQFyWeUk5uwRXIWwgJEggNgD3YxVUm722ypns0Ya20yrazoWs8d02Wzjd9uFnty6j83xlJ9l0Z6P6OlyDi0a1wdz8ziF4n03fJvN8-fK0mDwsc004iTlXSGhkuCF0va6ErngFtUDc1KRuEOOIKqPxGpWmNrRhlFakJlDVrMYVYxqTIbg99e5899mbEOXWBm3a48ldHyRiJaJYUMhSdHyKat-F4E0jd95ulT9IBOURTiY4-QcnE5xMcDLByQQnE1wqeTyVRK9ciEZ_yE3Xe5d-_E_NN1nagGM</recordid><startdate>20140226</startdate><enddate>20140226</enddate><creator>O'Loughlin, Michael J.</creator><creator>Stahlbush, Robert E.</creator><creator>Mahadik, Nadeemullah A.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140226</creationdate><title>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</title><author>O'Loughlin, Michael J. ; Stahlbush, Robert E. ; Mahadik, Nadeemullah A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Basal plane</topic><topic>Dislocations</topic><topic>Drift</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Glide</topic><topic>Inclusions</topic><topic>Migration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>O'Loughlin, Michael J.</creatorcontrib><creatorcontrib>Stahlbush, Robert E.</creatorcontrib><creatorcontrib>Mahadik, Nadeemullah A.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>O'Loughlin, Michael J.</au><au>Stahlbush, Robert E.</au><au>Mahadik, Nadeemullah A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</atitle><jtitle>Materials science forum</jtitle><date>2014-02-26</date><risdate>2014</risdate><volume>778-780</volume><spage>309</spage><epage>312</epage><pages>309-312</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.778-780.309</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0255-5476 |
ispartof | Materials science forum, 2014-02, Vol.778-780, p.309-312 |
issn | 0255-5476 1662-9752 1662-9752 |
language | eng |
recordid | cdi_proquest_miscellaneous_1651428406 |
source | Scientific.net Journals |
subjects | Basal plane Dislocations Drift Epitaxial growth Epitaxy Glide Inclusions Migration |
title | Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T21%3A23%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Basal%20Plane%20Dislocations%20from%20Inclusions%20in%204H-SiC%20Epitaxy&rft.jtitle=Materials%20science%20forum&rft.au=O'Loughlin,%20Michael%20J.&rft.date=2014-02-26&rft.volume=778-780&rft.spage=309&rft.epage=312&rft.pages=309-312&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.778-780.309&rft_dat=%3Cproquest_cross%3E1651428406%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1651428406&rft_id=info:pmid/&rfr_iscdi=true |