Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy

Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.309-312
Hauptverfasser: O'Loughlin, Michael J., Stahlbush, Robert E., Mahadik, Nadeemullah A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 312
container_issue
container_start_page 309
container_title Materials science forum
container_volume 778-780
creator O'Loughlin, Michael J.
Stahlbush, Robert E.
Mahadik, Nadeemullah A.
description Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.
doi_str_mv 10.4028/www.scientific.net/MSF.778-780.309
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1651428406</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1651428406</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</originalsourceid><addsrcrecordid>eNqV0F1LwzAUBuAgCs7pf-ilCO3y1ST1zs3NDSYK0-uQZilmdOlMUub-vZkTvPbqcODl5ZwHgDsECwqxGO33-yJoa1y0jdWFM3H0vJoVnIucC1gQWJ2BAWIM5xUv8TkYQFyWeUk5uwRXIWwgJEggNgD3YxVUm722ypns0Ya20yrazoWs8d02Wzjd9uFnty6j83xlJ9l0Z6P6OlyDi0a1wdz8ziF4n03fJvN8-fK0mDwsc004iTlXSGhkuCF0va6ErngFtUDc1KRuEOOIKqPxGpWmNrRhlFakJlDVrMYVYxqTIbg99e5899mbEOXWBm3a48ldHyRiJaJYUMhSdHyKat-F4E0jd95ulT9IBOURTiY4-QcnE5xMcDLByQQnE1wqeTyVRK9ciEZ_yE3Xe5d-_E_NN1nagGM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1651428406</pqid></control><display><type>article</type><title>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</title><source>Scientific.net Journals</source><creator>O'Loughlin, Michael J. ; Stahlbush, Robert E. ; Mahadik, Nadeemullah A.</creator><creatorcontrib>O'Loughlin, Michael J. ; Stahlbush, Robert E. ; Mahadik, Nadeemullah A.</creatorcontrib><description>Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.778-780.309</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>Basal plane ; Dislocations ; Drift ; Epitaxial growth ; Epitaxy ; Glide ; Inclusions ; Migration</subject><ispartof>Materials science forum, 2014-02, Vol.778-780, p.309-312</ispartof><rights>2014 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</citedby><cites>FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/2984?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>O'Loughlin, Michael J.</creatorcontrib><creatorcontrib>Stahlbush, Robert E.</creatorcontrib><creatorcontrib>Mahadik, Nadeemullah A.</creatorcontrib><title>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</title><title>Materials science forum</title><description>Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.</description><subject>Basal plane</subject><subject>Dislocations</subject><subject>Drift</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Glide</subject><subject>Inclusions</subject><subject>Migration</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqV0F1LwzAUBuAgCs7pf-ilCO3y1ST1zs3NDSYK0-uQZilmdOlMUub-vZkTvPbqcODl5ZwHgDsECwqxGO33-yJoa1y0jdWFM3H0vJoVnIucC1gQWJ2BAWIM5xUv8TkYQFyWeUk5uwRXIWwgJEggNgD3YxVUm722ypns0Ya20yrazoWs8d02Wzjd9uFnty6j83xlJ9l0Z6P6OlyDi0a1wdz8ziF4n03fJvN8-fK0mDwsc004iTlXSGhkuCF0va6ErngFtUDc1KRuEOOIKqPxGpWmNrRhlFakJlDVrMYVYxqTIbg99e5899mbEOXWBm3a48ldHyRiJaJYUMhSdHyKat-F4E0jd95ulT9IBOURTiY4-QcnE5xMcDLByQQnE1wqeTyVRK9ciEZ_yE3Xe5d-_E_NN1nagGM</recordid><startdate>20140226</startdate><enddate>20140226</enddate><creator>O'Loughlin, Michael J.</creator><creator>Stahlbush, Robert E.</creator><creator>Mahadik, Nadeemullah A.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140226</creationdate><title>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</title><author>O'Loughlin, Michael J. ; Stahlbush, Robert E. ; Mahadik, Nadeemullah A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-7a18c1e7e34dd98c9790c817eb3bf16714aec2d15ebe4f64493b30ab6b2966c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Basal plane</topic><topic>Dislocations</topic><topic>Drift</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Glide</topic><topic>Inclusions</topic><topic>Migration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>O'Loughlin, Michael J.</creatorcontrib><creatorcontrib>Stahlbush, Robert E.</creatorcontrib><creatorcontrib>Mahadik, Nadeemullah A.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>O'Loughlin, Michael J.</au><au>Stahlbush, Robert E.</au><au>Mahadik, Nadeemullah A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy</atitle><jtitle>Materials science forum</jtitle><date>2014-02-26</date><risdate>2014</risdate><volume>778-780</volume><spage>309</spage><epage>312</epage><pages>309-312</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>Suppression of basal plane dislocations (BPDs) from critical epitaxial drift layer has occurred mainly by converting BPDs in the substrate into threading edge dislocations before the BPDs enter the drift layer. As optimized epitaxial growth has produced drift layers free of BPDs originating from the substrate over a large fraction of the wafer, other sources of BPDs have become important. One source of BPDs introduced during epitaxial growth is from inclusions, which mainly consist of misoriented 4H-SiC. Inclusions are surrounded by a local cluster of BPDs and in thick, low-BPD epitaxy the outermost BPDs glide centimeters from the inclusion forming a much larger damaged area. The details of BPD migration from inclusions are discussed.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.778-780.309</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0255-5476
ispartof Materials science forum, 2014-02, Vol.778-780, p.309-312
issn 0255-5476
1662-9752
1662-9752
language eng
recordid cdi_proquest_miscellaneous_1651428406
source Scientific.net Journals
subjects Basal plane
Dislocations
Drift
Epitaxial growth
Epitaxy
Glide
Inclusions
Migration
title Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T21%3A23%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Basal%20Plane%20Dislocations%20from%20Inclusions%20in%204H-SiC%20Epitaxy&rft.jtitle=Materials%20science%20forum&rft.au=O'Loughlin,%20Michael%20J.&rft.date=2014-02-26&rft.volume=778-780&rft.spage=309&rft.epage=312&rft.pages=309-312&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.778-780.309&rft_dat=%3Cproquest_cross%3E1651428406%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1651428406&rft_id=info:pmid/&rfr_iscdi=true