Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC

We have investigated Raman spectra of p-type 4H-SiC crystals with hole concentration ranging from 3×1016 to 1×1021 cm-3. For folded transverse acoustic (FTA) doublet modes, Fano interference profiles were analyzed, and the frequency shift due to Fano interference was obtained as a function of hole c...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.475-478
Hauptverfasser:	Kojima, Kazutoshi, Ji, Shi Yang, Okumura, Hajime, Tomobe, Masaru, Nakashima, Shinichi, Mitani, Takeshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Calibration Carrier density Crystals Frequency shift Interference Joining Raman spectra Spectra
Online-Zugang:	Volltext
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