Estimation of the real temperature of samples in IR cell using OH frequency of silica

The peak top frequency of the stretching vibration of hydroxyl (OH) groups on amorphous silica reversibly changes accompanied by the change of the sample in temperature under the constant concentration. Using this phenomenon, the estimation of the real temperatures of samples in infrared (IR) cell c...

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Veröffentlicht in:	Surface and interface analysis 2015-01, Vol.47 (1), p.166-168
Hauptverfasser:	Yamazaki, H., Shima, H., Yoda, E., Kondo, J. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Calibration Constants Infrared Infrared radiation Interface analysis OH band Silicon dioxide Stretching temperature Vibration
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description	The peak top frequency of the stretching vibration of hydroxyl (OH) groups on amorphous silica reversibly changes accompanied by the change of the sample in temperature under the constant concentration. Using this phenomenon, the estimation of the real temperatures of samples in infrared (IR) cell can be achieved. The temperatures measured from outside the cell are first calibrated to real ones. The OH frequency of silica can be correlated to the real temperature of the sample inside the cell via the calibration of the measured and the real temperatures of samples in each IR cell. Copyright © 2014 John Wiley & Sons, Ltd.
doi_str_mv	10.1002/sia.5654
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subjects	Calibration Constants Infrared Infrared radiation Interface analysis OH band Silicon dioxide Stretching temperature Vibration
title	Estimation of the real temperature of samples in IR cell using OH frequency of silica
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