Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel
•The geometric effects of a lateral asymmetric channel for high-voltage MOSFETs.•The LAC device was realized using a p-body doping region.•0.18-μm 20-V class HV CMOS process was applied for fabrication.•The electrical characteristics are varied with the p-body length of the LAC.•The p-body length of...
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| Veröffentlicht in: | Solid-state electronics 2015-01, Vol.103, p.98-103 |
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| container_title | Solid-state electronics |
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| creator | Baek, Ki-Ju Na, Kee-Yeol Lee, Young-Jun Kim, Yeong-Seuk |
| description | •The geometric effects of a lateral asymmetric channel for high-voltage MOSFETs.•The LAC device was realized using a p-body doping region.•0.18-μm 20-V class HV CMOS process was applied for fabrication.•The electrical characteristics are varied with the p-body length of the LAC.•The p-body length of the LAC is one of key parameters for device optimization.
This paper presents the geometric effects of a lateral asymmetric channel (LAC) structure for high-voltage (HV) MOSFETs. The LAC structure was adopted to enhance the device performance by modifying the potential distribution in the channel and reducing the parasitic transistor effect. The LAC structure was realized using a p-body doping region inside the channel for the HV device. The effects of the p-body length were examined. The experiments showed that the p-body length is a key parameter for device optimization considering circuit applications. The HV LAC device with a shorter p-body length showed transconductance (gm) improvement and on-resistance (RON) reduction. The maximized output resistance (rout) was obtained when the p-body length was approximately half of the channel length. |
| doi_str_mv | 10.1016/j.sse.2014.10.008 |
| format | Article |
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This paper presents the geometric effects of a lateral asymmetric channel (LAC) structure for high-voltage (HV) MOSFETs. The LAC structure was adopted to enhance the device performance by modifying the potential distribution in the channel and reducing the parasitic transistor effect. The LAC structure was realized using a p-body doping region inside the channel for the HV device. The effects of the p-body length were examined. The experiments showed that the p-body length is a key parameter for device optimization considering circuit applications. The HV LAC device with a shorter p-body length showed transconductance (gm) improvement and on-resistance (RON) reduction. The maximized output resistance (rout) was obtained when the p-body length was approximately half of the channel length.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2014.10.008</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Asymmetry ; Channels ; Circuits ; Devices ; High voltage (HV) ; Lateral asymmetric channel (LAC) ; MOSFET ; MOSFETs ; On-resistance (RON) ; Optimization ; Output resistance (rout) ; Semiconductor devices ; Transconductance ; Transconductance (gm)</subject><ispartof>Solid-state electronics, 2015-01, Vol.103, p.98-103</ispartof><rights>2014 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c282t-af72b724e48ec9342270d5f16153438fc46e9f1cf718dfa6b3426a042a695ef13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110114002536$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Baek, Ki-Ju</creatorcontrib><creatorcontrib>Na, Kee-Yeol</creatorcontrib><creatorcontrib>Lee, Young-Jun</creatorcontrib><creatorcontrib>Kim, Yeong-Seuk</creatorcontrib><title>Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel</title><title>Solid-state electronics</title><description>•The geometric effects of a lateral asymmetric channel for high-voltage MOSFETs.•The LAC device was realized using a p-body doping region.•0.18-μm 20-V class HV CMOS process was applied for fabrication.•The electrical characteristics are varied with the p-body length of the LAC.•The p-body length of the LAC is one of key parameters for device optimization.
This paper presents the geometric effects of a lateral asymmetric channel (LAC) structure for high-voltage (HV) MOSFETs. The LAC structure was adopted to enhance the device performance by modifying the potential distribution in the channel and reducing the parasitic transistor effect. The LAC structure was realized using a p-body doping region inside the channel for the HV device. The effects of the p-body length were examined. The experiments showed that the p-body length is a key parameter for device optimization considering circuit applications. The HV LAC device with a shorter p-body length showed transconductance (gm) improvement and on-resistance (RON) reduction. The maximized output resistance (rout) was obtained when the p-body length was approximately half of the channel length.</description><subject>Asymmetry</subject><subject>Channels</subject><subject>Circuits</subject><subject>Devices</subject><subject>High voltage (HV)</subject><subject>Lateral asymmetric channel (LAC)</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>On-resistance (RON)</subject><subject>Optimization</subject><subject>Output resistance (rout)</subject><subject>Semiconductor devices</subject><subject>Transconductance</subject><subject>Transconductance (gm)</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kEtPAyEURonRxFr9Ae5YupmRy7zjyjQ-mtR0oa4JZS4dGmamAtX038ukrl0RyDlfwiHkFlgKDMr7Xeo9ppxBHu8pY_UZmUFdNQnPWXFOZoxldQIRvSRX3u8YY7wENiNu2e-lCnTUdJ9sxvZILQ7b0NFxoKFDihZVcEZJS1UnXUTRGR-M8pPSmW2XfI82yC3St_X789MH_THRltTKSEZL-mPf4zQxDQwD2mtyoaX1ePN3zsln9BavyWr9slw8rhLFax4SqSu-qXiOeY2qyXLOK9YWGkoosjyrtcpLbDQoXUHdalluIlJKlnNZNgVqyObk7rS7d-PXAX0QvfEKrZUDjgcvoCxgWoU6onBClRu9d6jF3pleuqMAJqa-YidiXzH1nZ5i3-g8nByMf_g26IRXBgeFrXGxmWhH84_9C-b_g34</recordid><startdate>201501</startdate><enddate>201501</enddate><creator>Baek, Ki-Ju</creator><creator>Na, Kee-Yeol</creator><creator>Lee, Young-Jun</creator><creator>Kim, Yeong-Seuk</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201501</creationdate><title>Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel</title><author>Baek, Ki-Ju ; Na, Kee-Yeol ; Lee, Young-Jun ; Kim, Yeong-Seuk</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c282t-af72b724e48ec9342270d5f16153438fc46e9f1cf718dfa6b3426a042a695ef13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Asymmetry</topic><topic>Channels</topic><topic>Circuits</topic><topic>Devices</topic><topic>High voltage (HV)</topic><topic>Lateral asymmetric channel (LAC)</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>On-resistance (RON)</topic><topic>Optimization</topic><topic>Output resistance (rout)</topic><topic>Semiconductor devices</topic><topic>Transconductance</topic><topic>Transconductance (gm)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baek, Ki-Ju</creatorcontrib><creatorcontrib>Na, Kee-Yeol</creatorcontrib><creatorcontrib>Lee, Young-Jun</creatorcontrib><creatorcontrib>Kim, Yeong-Seuk</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baek, Ki-Ju</au><au>Na, Kee-Yeol</au><au>Lee, Young-Jun</au><au>Kim, Yeong-Seuk</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel</atitle><jtitle>Solid-state electronics</jtitle><date>2015-01</date><risdate>2015</risdate><volume>103</volume><spage>98</spage><epage>103</epage><pages>98-103</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>•The geometric effects of a lateral asymmetric channel for high-voltage MOSFETs.•The LAC device was realized using a p-body doping region.•0.18-μm 20-V class HV CMOS process was applied for fabrication.•The electrical characteristics are varied with the p-body length of the LAC.•The p-body length of the LAC is one of key parameters for device optimization.
This paper presents the geometric effects of a lateral asymmetric channel (LAC) structure for high-voltage (HV) MOSFETs. The LAC structure was adopted to enhance the device performance by modifying the potential distribution in the channel and reducing the parasitic transistor effect. The LAC structure was realized using a p-body doping region inside the channel for the HV device. The effects of the p-body length were examined. The experiments showed that the p-body length is a key parameter for device optimization considering circuit applications. The HV LAC device with a shorter p-body length showed transconductance (gm) improvement and on-resistance (RON) reduction. The maximized output resistance (rout) was obtained when the p-body length was approximately half of the channel length.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2014.10.008</doi><tpages>6</tpages></addata></record> |
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| ispartof | Solid-state electronics, 2015-01, Vol.103, p.98-103 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Asymmetry Channels Circuits Devices High voltage (HV) Lateral asymmetric channel (LAC) MOSFET MOSFETs On-resistance (RON) Optimization Output resistance (rout) Semiconductor devices Transconductance Transconductance (gm) |
| title | Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel |
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