Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing

An innovative approach towards the physico‐chemical tailoring of zinc oxide thin films is reported. The films have been deposited by liquid phase using the sol–gel method and then exposed to hard X‐rays, provided by a synchrotron storage ring, for lithography. The use of surfactant and chelating age...

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Veröffentlicht in:Journal of synchrotron radiation 2015-01, Vol.22 (1), p.165-171
Hauptverfasser: Malfatti, Luca, Pinna, Alessandra, Enzo, Stefano, Falcaro, Paolo, Marmiroli, Benedetta, Innocenzi, Plinio
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container_end_page 171
container_issue 1
container_start_page 165
container_title Journal of synchrotron radiation
container_volume 22
creator Malfatti, Luca
Pinna, Alessandra
Enzo, Stefano
Falcaro, Paolo
Marmiroli, Benedetta
Innocenzi, Plinio
description An innovative approach towards the physico‐chemical tailoring of zinc oxide thin films is reported. The films have been deposited by liquid phase using the sol–gel method and then exposed to hard X‐rays, provided by a synchrotron storage ring, for lithography. The use of surfactant and chelating agents in the sol allows easy‐to‐pattern films made by an organic–inorganic matrix to be deposited. The exposure to hard X‐rays strongly affects the nucleation and growth of crystalline ZnO, triggering the formation of two intermediate phases before obtaining a wurtzite‐like structure. At the same time, X‐ray lithography allows for a fast patterning of the coatings enabling microfabrication for sensing and arrays technology.
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subjects Arrays
bottom-up/top-down
Deposition
Exposure
Lithography
sol-gel
thin film
Thin films
Tuning
X-rays
Zinc oxide
Zinc oxides
title Tuning the phase transition of ZnO thin films through lithography: an integrated bottom-up and top-down processing
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