Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition
The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plan...
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| Veröffentlicht in: | Rare metals 2014-12, Vol.33 (6), p.709-713 |
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| creator | Zhong, Can-Tao Zhang, Guo-Yi |
| description | The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle. |
| doi_str_mv | 10.1007/s12598-013-0163-5 |
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It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.</description><identifier>ISSN: 1001-0521</identifier><identifier>EISSN: 1867-7185</identifier><identifier>DOI: 10.1007/s12598-013-0163-5</identifier><language>eng</language><publisher>Springer Berlin Heidelberg: Nonferrous Metals Society of China</publisher><subject>Biomaterials ; Chemistry and Materials Science ; Crystal structure ; Energy ; Flats ; Gallium nitrides ; GaN ; Materials Engineering ; Materials Science ; Metal organic chemical vapor deposition ; Metallic Materials ; Misorientation ; MOCVD ; Morphology ; Nanoscale Science and Technology ; Physical Chemistry ; Sapphire ; Strain ; 极性 ; 生长 ; 结晶质量 ; 蓝宝石衬底 ; 表面形貌 ; 金属有机化学气相沉积</subject><ispartof>Rare metals, 2014-12, Vol.33 (6), p.709-713</ispartof><rights>The Author(s) 2013</rights><rights>The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c555t-136b3469898da078cfc0e3826e651c61fc998facce79fd02c303fa75ca6da4a83</citedby><cites>FETCH-LOGICAL-c555t-136b3469898da078cfc0e3826e651c61fc998facce79fd02c303fa75ca6da4a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85314X/85314X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12598-013-0163-5$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12598-013-0163-5$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Zhong, Can-Tao</creatorcontrib><creatorcontrib>Zhang, Guo-Yi</creatorcontrib><title>Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition</title><title>Rare metals</title><addtitle>Rare Met</addtitle><addtitle>Rare Metals</addtitle><description>The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.</description><subject>Biomaterials</subject><subject>Chemistry and Materials Science</subject><subject>Crystal structure</subject><subject>Energy</subject><subject>Flats</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Materials Engineering</subject><subject>Materials Science</subject><subject>Metal organic chemical vapor deposition</subject><subject>Metallic Materials</subject><subject>Misorientation</subject><subject>MOCVD</subject><subject>Morphology</subject><subject>Nanoscale Science and Technology</subject><subject>Physical Chemistry</subject><subject>Sapphire</subject><subject>Strain</subject><subject>极性</subject><subject>生长</subject><subject>结晶质量</subject><subject>蓝宝石衬底</subject><subject>表面形貌</subject><subject>金属有机化学气相沉积</subject><issn>1001-0521</issn><issn>1867-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kDFPwzAQhSMEEqXwA9gsWFgCvjh2nBFVUJCqssCK5TpO4yqJUzsp6r_HVSqEGBgsW-fvvbt7UXQN-B4wzh48JDTnMQYSDiMxPYkmwFkWZ8DpaXhjDDGmCZxHF95vME5TxvAk-pw7-9VXyJZoGXe2lg7N5RLZFu2MMq2skZddVxmnkR9Wvney12i1R43uw591a9kahVSlG6NCYSc761ChO-tNb2x7GZ2Vsvb66nhPo4_np_fZS7x4m7_OHhexopT2MRC2IinLec4LiTOuSoU14QnTjIJiUKo856VUSmd5WeBEEUxKmVElWSFTyck0uht9O2e3g_a9aIxXuq5lq-3gBQSfFPKMkYDe_kE3dnBh0wOV8DAFoRAoGCnlrPdOl6JzppFuLwCLQ-JiTFyExMUhcUGDJhk1PrDtWrtfzv-Ibo6NKtuut0H304kxmgJJA_cNemiOxQ</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Zhong, Can-Tao</creator><creator>Zhang, Guo-Yi</creator><general>Nonferrous Metals Society of China</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>L7M</scope></search><sort><creationdate>20141201</creationdate><title>Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition</title><author>Zhong, Can-Tao ; 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It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.</abstract><cop>Springer Berlin Heidelberg</cop><pub>Nonferrous Metals Society of China</pub><doi>10.1007/s12598-013-0163-5</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| source | Springer Nature - Complete Springer Journals; Alma/SFX Local Collection |
| subjects | Biomaterials Chemistry and Materials Science Crystal structure Energy Flats Gallium nitrides GaN Materials Engineering Materials Science Metal organic chemical vapor deposition Metallic Materials Misorientation MOCVD Morphology Nanoscale Science and Technology Physical Chemistry Sapphire Strain 极性 生长 结晶质量 蓝宝石衬底 表面形貌 金属有机化学气相沉积 |
| title | Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition |
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