Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the s...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.428-431
Hauptverfasser:	Thompson, Robin. F., Goss, Jonathan P., Martin, Lucy Claire, Smith, Dave A., Clark, David T., Young, R.A.R., Chan, Hua Khee, Horsfall, Alton B., Ramsay, Ewan P., Murphy, A.E., Wright, Nicholas G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Density Field effect transistors Gates Low frequencies Noise Semiconductor devices Semiconductors
Online-Zugang:	Volltext
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