Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (Dit). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5 l/min) a...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.599-602
Hauptverfasser:	Jennings, Michael R., Thomas, Stephen M., Fisher, Craig A., Mawby, Philip Andrew, Sharma, Yogesh K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Density Flow rate Metal oxide semiconductors Oxidation Oxides Semiconductor devices Silicon carbide
Online-Zugang:	Volltext
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