Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (Dit). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5 l/min) a...
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| Veröffentlicht in: | Materials science forum 2014-02, Vol.778-780, p.599-602 |
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| creator | Thomas, Stephen M. Sharma, Yogesh K. Jennings, Michael R. Fisher, Craig A. Mawby, Philip Andrew |
| description | Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (Dit). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5 l/min) and oxidation temperature (1200°C-1600°C) on the Dit is investigated. The Dit was reduced by up to an order of magnitude using a combination of a low oxygen flow rate and a high temperature. The Dit was extracted from capacitance-voltage measurements made on MOS capacitors. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.778-780.599 |
| format | Article |
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| source | Scientific.net Journals |
| subjects | Capacitors Density Flow rate Metal oxide semiconductors Oxidation Oxides Semiconductor devices Silicon carbide |
| title | Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors |
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