Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents
We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technol...
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| Veröffentlicht in: | Materials science forum 2014-02, Vol.778-780, p.79-82 |
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| creator | Sakamoto, Hidemitsu Kamei, Kazuhito Bessho, Takeshi Daikoku, Hironori Moriguchi, Koji Kaido, Hiroshi Kado, Motohisa Okada, Nobuhiro Danno, Katsunori Ujihara, Toru Kusunoki, Kazuhiko |
| description | We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.778-780.79 |
| format | Article |
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Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.</description><subject>Crystal structure</subject><subject>Crystals</subject><subject>Melts</subject><subject>Optimization</subject><subject>Precipitation</subject><subject>Silicon carbide</subject><subject>Single crystals</subject><subject>Solvents</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqVkEtPxCAUhYnRxPHxH1jqohUohXap9ZloXIy6JQy9OGinjECd-O_FjIlrV_csTr6c-yF0SknJCWvONptNGY2DMTnrTDlCOnuYX5dSNoVsSCnbHTSjQrCilTXbRTPC6rqouRT76CDGN0Iq2lAxQy9Pfl3MAXro8dwPU3J-xDfBb9ISe4srfDeaJb50egUJAua3xdx1-GIa3nEXvmLSA36ObnzFD_CTM-Izb4pHaM_qIcLx7z1Ez9dXT91tcf94c9ed3xemkiQVfW_7ylhTA5dQawac9KzlQBgsuGgrauWCS9kyCUJWTFib06IStSYNbbWtDtHJlrsO_mOCmNTKRQPDoEfwU1RU1JTTRrQ8V8-3VRN8jAGsWge30uFLUaJ-nKrsVP05Vdmpyk5VdqqyUyXbzOi2jBT0GBOYpXrzUxjzi_-gfANsl4lT</recordid><startdate>20140226</startdate><enddate>20140226</enddate><creator>Sakamoto, Hidemitsu</creator><creator>Kamei, Kazuhito</creator><creator>Bessho, Takeshi</creator><creator>Daikoku, Hironori</creator><creator>Moriguchi, Koji</creator><creator>Kaido, Hiroshi</creator><creator>Kado, Motohisa</creator><creator>Okada, Nobuhiro</creator><creator>Danno, Katsunori</creator><creator>Ujihara, Toru</creator><creator>Kusunoki, Kazuhiko</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140226</creationdate><title>Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents</title><author>Sakamoto, Hidemitsu ; Kamei, Kazuhito ; Bessho, Takeshi ; Daikoku, Hironori ; Moriguchi, Koji ; Kaido, Hiroshi ; Kado, Motohisa ; Okada, Nobuhiro ; Danno, Katsunori ; Ujihara, Toru ; Kusunoki, Kazuhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-ddfd3cfc5e47e5a2e40d294e02eb46931f7b477927e67326ff27eb365a0819af3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Crystal structure</topic><topic>Crystals</topic><topic>Melts</topic><topic>Optimization</topic><topic>Precipitation</topic><topic>Silicon carbide</topic><topic>Single crystals</topic><topic>Solvents</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sakamoto, Hidemitsu</creatorcontrib><creatorcontrib>Kamei, Kazuhito</creatorcontrib><creatorcontrib>Bessho, Takeshi</creatorcontrib><creatorcontrib>Daikoku, Hironori</creatorcontrib><creatorcontrib>Moriguchi, Koji</creatorcontrib><creatorcontrib>Kaido, Hiroshi</creatorcontrib><creatorcontrib>Kado, Motohisa</creatorcontrib><creatorcontrib>Okada, Nobuhiro</creatorcontrib><creatorcontrib>Danno, Katsunori</creatorcontrib><creatorcontrib>Ujihara, Toru</creatorcontrib><creatorcontrib>Kusunoki, Kazuhiko</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakamoto, Hidemitsu</au><au>Kamei, Kazuhito</au><au>Bessho, Takeshi</au><au>Daikoku, Hironori</au><au>Moriguchi, Koji</au><au>Kaido, Hiroshi</au><au>Kado, Motohisa</au><au>Okada, Nobuhiro</au><au>Danno, Katsunori</au><au>Ujihara, Toru</au><au>Kusunoki, Kazuhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents</atitle><jtitle>Materials science forum</jtitle><date>2014-02-26</date><risdate>2014</risdate><volume>778-780</volume><spage>79</spage><epage>82</epage><pages>79-82</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. 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| subjects | Crystal structure Crystals Melts Optimization Precipitation Silicon carbide Single crystals Solvents |
| title | Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents |
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