Visible Light Sensor Based on Metal-Oxide-Semiconductor Structure
We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to me...
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| Veröffentlicht in: | Key engineering materials 2014-04, Vol.605, p.384-387 |
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| creator | Nedev, Roumen Sanchez, Alejandro Nesheva, Diana Nedev, Nicola Valdez, Benjamin Arias, Abraham Curiel, Mario Manolov, Emil Herrera, Rigoberto Mateos, David |
| description | We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to measure visible and UV light intensity or as a light switch. The output signal is change of the inversion capacitance under light illumination at a given bias. The device power consumption is very low and the output signal is independent of the temperature. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.605.384 |
| format | Article |
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| subjects | Devices Illumination Inversions Low cost Power consumption Sensors Silicon Switches |
| title | Visible Light Sensor Based on Metal-Oxide-Semiconductor Structure |
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