Visible Light Sensor Based on Metal-Oxide-Semiconductor Structure

We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to me...

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Veröffentlicht in:	Key engineering materials 2014-04, Vol.605, p.384-387
Hauptverfasser:	Nedev, Roumen, Sanchez, Alejandro, Nesheva, Diana, Nedev, Nicola, Valdez, Benjamin, Arias, Abraham, Curiel, Mario, Manolov, Emil, Herrera, Rigoberto, Mateos, David
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Illumination Inversions Low cost Power consumption Sensors Silicon Switches
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Beschreibung
Zusammenfassung:	We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to measure visible and UV light intensity or as a light switch. The output signal is change of the inversion capacitance under light illumination at a given bias. The device power consumption is very low and the output signal is independent of the temperature.
ISSN:	1013-9826 1662-9795 1662-9795
DOI:	10.4028/www.scientific.net/KEM.605.384