GeSi modulator based on two-mode interference

A GeSi modulator based on two-mode interference is designed in this study. A GeSi layer with a height of 0.22 μm is introduced to decrease the optical power overlap of the two modes. A doping region in which the free carrier plasma dispersion effect exists to change the oscillation period for on- an...

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Veröffentlicht in:	Applied optics (2004) 2014-01, Vol.53 (2), p.221-225
Hauptverfasser:	Li, Ya-Ming, Cheng, Bu-Wen
Format:	Artikel
Sprache:	eng
Schlagworte:	Dispersions Doping Electrodes Interference Modulation Modulators Noise levels Oscillations
Online-Zugang:	Volltext
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