Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD
This paper presents an experimental investigation of microstructure and piezoresistive properties of phosphorus-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films. The phosphorus-doped nc-Si:H thin films (5% doping ratio of PH3 to SiH4) were deposited by plasma enhanced chemical vapor d...
Gespeichert in:
Veröffentlicht in: | Key engineering materials 2014-04, Vol.609-610, p.208-217 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!