Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD

This paper presents an experimental investigation of microstructure and piezoresistive properties of phosphorus-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films. The phosphorus-doped nc-Si:H thin films (5% doping ratio of PH3 to SiH4) were deposited by plasma enhanced chemical vapor d...

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Veröffentlicht in:Key engineering materials 2014-04, Vol.609-610, p.208-217
Hauptverfasser: Pan, Hai Bin, Cheng, Guang Gui, Cao, Bao Guo, Ding, Jian Ning
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Sprache:eng
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