Temperature-dependent effects in high-speed travelling-wave electroabsorption modulators

Temperature-dependent effects in high-speed travelling-wave electroabsorption modulators

The temperature-dependent effects in a segmented travelling-wave electroabsorption modulator are demonstrated and analysed. Optimum operation voltages with the highest modulation efficiency at different temperatures are identified. This can ensure the modulator working at 50 Gbit/s with RF extinctio...

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Veröffentlicht in:Electronics letters 2005-02, Vol.41 (4), p.1-1
Hauptverfasser: Yu, Y, Lewen, R, Westergren, U, Thylen, L, Irmscher, S, Eriksson, U
Format: Artikel
Sprache:eng
Schlagworte:
Electric potential
Electroabsorption modulators
High speed
Modulation
Modulators
Noise levels
Optimization
Voltage
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Zusammenfassung:The temperature-dependent effects in a segmented travelling-wave electroabsorption modulator are demonstrated and analysed. Optimum operation voltages with the highest modulation efficiency at different temperatures are identified. This can ensure the modulator working at 50 Gbit/s with RF extinction ratio > 8.4 dB between 10-50°C at λ = 1540 nm.
ISSN:0013-5194
1350-911X