Interface characterization of nitrogen plasma-treated gate oxide film formed by RTP technology

We described thin nitrogen plasma‐treated gate oxide film formed by rapid thermal process technology. This thin nitrogen plasma‐treated gate oxide film has been formed using remote plasma nitridation process onto in situ steam generated oxide layer. We investigated the nitrogen profile within the ga...

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Veröffentlicht in:	Surface and interface analysis 2014-11, Vol.46 (S1), p.303-306
Hauptverfasser:	Choi, Jae-Sung, Park, Jae-Gun
Format:	Artikel
Sprache:	eng
Schlagworte:	boron diffusion barrier capacitance-voltage (C-V) Dielectric strength gate dielectric film Gates in situ steam generated oxide Ion nitriding Leakage current nitrogen profile Oxide coatings remote plasma nitridation Silicon Silicon dioxide SIMS time-to-breakdown Voltage
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