Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films
•The p-type ZnO thin films with low resistivity are obtained by P–N codoping method.•The p-type character is identified by rectification character of ZnO homojunction.•The electrical properties are extremely sensitive to the annealing temperature.•The p-type ZnO with good properties is obtained at m...
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| Veröffentlicht in: | Applied surface science 2013-12, Vol.287, p.484-489 |
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| creator | Sui, Y.R. Yao, B. Xiao, L. Yang, L.L. Cao, J. Li, X.F. Xing, G.Z. Lang, J.H. Li, X.Y. Lv, S.Q. Meng, X.W. Liu, X.Y. Yang, J.H. |
| description | •The p-type ZnO thin films with low resistivity are obtained by P–N codoping method.•The p-type character is identified by rectification character of ZnO homojunction.•The electrical properties are extremely sensitive to the annealing temperature.•The p-type ZnO with good properties is obtained at middle annealing temperature.•The chemical states of P and N are identified by XPS analysis.
P and N dual-acceptor doped p-type zinc oxide (ZnO:(P, N)) films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and the Hall measurement techniques were employed to investigate the structural and the electrical properties in detail. Results indicated the electrical properties of the ZnO:(P, N) films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 650°C to 850°C. The p-type ZnO:(P, N) film with the lower resistivity of 3.98Ωcm, a hole concentration and Hall mobility of 1.16×1018cm−3 and 1.35cm2/Vs, respectively, was obtained at an optimal annealing temperature of 800°C. The p-type conduction behavior of the ZnO:(P, N) film was confirmed by the rectifying I–V characteristics of the p-ZnO:(P, N)/n-ZnO homojunction. The chemical bonding states of P and N doped in ZnO:(P, N) film were examined by XPS analysis. |
| doi_str_mv | 10.1016/j.apsusc.2013.10.010 |
| format | Article |
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P and N dual-acceptor doped p-type zinc oxide (ZnO:(P, N)) films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and the Hall measurement techniques were employed to investigate the structural and the electrical properties in detail. Results indicated the electrical properties of the ZnO:(P, N) films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 650°C to 850°C. The p-type ZnO:(P, N) film with the lower resistivity of 3.98Ωcm, a hole concentration and Hall mobility of 1.16×1018cm−3 and 1.35cm2/Vs, respectively, was obtained at an optimal annealing temperature of 800°C. The p-type conduction behavior of the ZnO:(P, N) film was confirmed by the rectifying I–V characteristics of the p-ZnO:(P, N)/n-ZnO homojunction. The chemical bonding states of P and N doped in ZnO:(P, N) film were examined by XPS analysis.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2013.10.010</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Annealing ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Dual-acceptor doping ; Electrical properties ; Exact sciences and technology ; Magnetron sputtering ; Physics ; Secondary ion mass spectrometry ; Thin films ; Volt-ampere characteristics ; X-ray photoelectron spectroscopy ; X-rays ; Zinc oxide ; ZnO film</subject><ispartof>Applied surface science, 2013-12, Vol.287, p.484-489</ispartof><rights>2013 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-75efefb3a9e814e2e33c847298062e213a68a23aa1dad586ed5b3721672dcd163</citedby><cites>FETCH-LOGICAL-c369t-75efefb3a9e814e2e33c847298062e213a68a23aa1dad586ed5b3721672dcd163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2013.10.010$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28597552$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sui, Y.R.</creatorcontrib><creatorcontrib>Yao, B.</creatorcontrib><creatorcontrib>Xiao, L.</creatorcontrib><creatorcontrib>Yang, L.L.</creatorcontrib><creatorcontrib>Cao, J.</creatorcontrib><creatorcontrib>Li, X.F.</creatorcontrib><creatorcontrib>Xing, G.Z.</creatorcontrib><creatorcontrib>Lang, J.H.</creatorcontrib><creatorcontrib>Li, X.Y.</creatorcontrib><creatorcontrib>Lv, S.Q.</creatorcontrib><creatorcontrib>Meng, X.W.</creatorcontrib><creatorcontrib>Liu, X.Y.</creatorcontrib><creatorcontrib>Yang, J.H.</creatorcontrib><title>Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films</title><title>Applied surface science</title><description>•The p-type ZnO thin films with low resistivity are obtained by P–N codoping method.•The p-type character is identified by rectification character of ZnO homojunction.•The electrical properties are extremely sensitive to the annealing temperature.•The p-type ZnO with good properties is obtained at middle annealing temperature.•The chemical states of P and N are identified by XPS analysis.
P and N dual-acceptor doped p-type zinc oxide (ZnO:(P, N)) films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and the Hall measurement techniques were employed to investigate the structural and the electrical properties in detail. Results indicated the electrical properties of the ZnO:(P, N) films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 650°C to 850°C. The p-type ZnO:(P, N) film with the lower resistivity of 3.98Ωcm, a hole concentration and Hall mobility of 1.16×1018cm−3 and 1.35cm2/Vs, respectively, was obtained at an optimal annealing temperature of 800°C. The p-type conduction behavior of the ZnO:(P, N) film was confirmed by the rectifying I–V characteristics of the p-ZnO:(P, N)/n-ZnO homojunction. The chemical bonding states of P and N doped in ZnO:(P, N) film were examined by XPS analysis.</description><subject>Annealing</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Dual-acceptor doping</subject><subject>Electrical properties</subject><subject>Exact sciences and technology</subject><subject>Magnetron sputtering</subject><subject>Physics</subject><subject>Secondary ion mass spectrometry</subject><subject>Thin films</subject><subject>Volt-ampere characteristics</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><subject>Zinc oxide</subject><subject>ZnO film</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kM1Kw0AUhQdRsFbfwMVsBDep85OZJBtBin9QrKBu3Ay3Mzd0SprEmVTQle_gG_okpqS4dHXh3O_cwz2EnHI24Yzri9UE2riJdiIYl700YZztkRHPM5kolaf7ZNRjRZJKKQ7JUYwrxrjotyPydAOL4C10vqkp1I7aJQSwHQb_OYhNSR9_vr4fqNtARcFabLsmUNe06GibdB8t0td6Trulr2npq3U8JgclVBFPdnNMXm6un6d3yWx-ez-9miVW6qJLMoUllgsJBeY8RYFS2jzNRJEzLVBwCToHIQG4A6dyjU4tZCa4zoSzjms5JufD3TY0bxuMnVn7aLGqoMZmEw3Xissi1anq0XRAbWhiDFiaNvg1hA_Dmdl2aFZm6NBsO9yqfYe97WyXANFCVQaorY9_XpGrIlNK9NzlwGH_7rvHYKL1WFt0PqDtjGv8_0G_Yl2J4g</recordid><startdate>20131215</startdate><enddate>20131215</enddate><creator>Sui, Y.R.</creator><creator>Yao, B.</creator><creator>Xiao, L.</creator><creator>Yang, L.L.</creator><creator>Cao, J.</creator><creator>Li, X.F.</creator><creator>Xing, G.Z.</creator><creator>Lang, J.H.</creator><creator>Li, X.Y.</creator><creator>Lv, S.Q.</creator><creator>Meng, X.W.</creator><creator>Liu, X.Y.</creator><creator>Yang, J.H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131215</creationdate><title>Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films</title><author>Sui, Y.R. ; Yao, B. ; Xiao, L. ; Yang, L.L. ; Cao, J. ; Li, X.F. ; Xing, G.Z. ; Lang, J.H. ; Li, X.Y. ; Lv, S.Q. ; Meng, X.W. ; Liu, X.Y. ; Yang, J.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-75efefb3a9e814e2e33c847298062e213a68a23aa1dad586ed5b3721672dcd163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Dual-acceptor doping</topic><topic>Electrical properties</topic><topic>Exact sciences and technology</topic><topic>Magnetron sputtering</topic><topic>Physics</topic><topic>Secondary ion mass spectrometry</topic><topic>Thin films</topic><topic>Volt-ampere characteristics</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><topic>Zinc oxide</topic><topic>ZnO film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sui, Y.R.</creatorcontrib><creatorcontrib>Yao, B.</creatorcontrib><creatorcontrib>Xiao, L.</creatorcontrib><creatorcontrib>Yang, L.L.</creatorcontrib><creatorcontrib>Cao, J.</creatorcontrib><creatorcontrib>Li, X.F.</creatorcontrib><creatorcontrib>Xing, G.Z.</creatorcontrib><creatorcontrib>Lang, J.H.</creatorcontrib><creatorcontrib>Li, X.Y.</creatorcontrib><creatorcontrib>Lv, S.Q.</creatorcontrib><creatorcontrib>Meng, X.W.</creatorcontrib><creatorcontrib>Liu, X.Y.</creatorcontrib><creatorcontrib>Yang, J.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sui, Y.R.</au><au>Yao, B.</au><au>Xiao, L.</au><au>Yang, L.L.</au><au>Cao, J.</au><au>Li, X.F.</au><au>Xing, G.Z.</au><au>Lang, J.H.</au><au>Li, X.Y.</au><au>Lv, S.Q.</au><au>Meng, X.W.</au><au>Liu, X.Y.</au><au>Yang, J.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films</atitle><jtitle>Applied surface science</jtitle><date>2013-12-15</date><risdate>2013</risdate><volume>287</volume><spage>484</spage><epage>489</epage><pages>484-489</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>•The p-type ZnO thin films with low resistivity are obtained by P–N codoping method.•The p-type character is identified by rectification character of ZnO homojunction.•The electrical properties are extremely sensitive to the annealing temperature.•The p-type ZnO with good properties is obtained at middle annealing temperature.•The chemical states of P and N are identified by XPS analysis.
P and N dual-acceptor doped p-type zinc oxide (ZnO:(P, N)) films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and the Hall measurement techniques were employed to investigate the structural and the electrical properties in detail. Results indicated the electrical properties of the ZnO:(P, N) films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 650°C to 850°C. The p-type ZnO:(P, N) film with the lower resistivity of 3.98Ωcm, a hole concentration and Hall mobility of 1.16×1018cm−3 and 1.35cm2/Vs, respectively, was obtained at an optimal annealing temperature of 800°C. The p-type conduction behavior of the ZnO:(P, N) film was confirmed by the rectifying I–V characteristics of the p-ZnO:(P, N)/n-ZnO homojunction. The chemical bonding states of P and N doped in ZnO:(P, N) film were examined by XPS analysis.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2013.10.010</doi><tpages>6</tpages></addata></record> |
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| subjects | Annealing Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Dual-acceptor doping Electrical properties Exact sciences and technology Magnetron sputtering Physics Secondary ion mass spectrometry Thin films Volt-ampere characteristics X-ray photoelectron spectroscopy X-rays Zinc oxide ZnO film |
| title | Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films |
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