Implementing ultra-high-value floating tunable CMOS resistors

In this paper, a compact high-value floating resistor utilising PMOS devices in the subthreshold region is introduced. A test chip has been fabricated in 0.18 μm CMOS technology to verify the proposed concept. This technique has been applied to design a reconfigurable sixth-order very-low-cutoff-fre...

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Veröffentlicht in:Electronics letters 2008-02, Vol.44 (5), p.1-1
Hauptverfasser: Tajalli, A, Leblebici, Y, Brauer, E J
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, a compact high-value floating resistor utilising PMOS devices in the subthreshold region is introduced. A test chip has been fabricated in 0.18 μm CMOS technology to verify the proposed concept. This technique has been applied to design a reconfigurable sixth-order very-low-cutoff-frequency MOSFET-C filter.
ISSN:0013-5194
1350-911X