Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

•AlN films were grown by plasma-enhanced atomic layer deposition.•Bipolar resistive switching properties were observed in Cu/PEALD-AlN/Pt devices.•The properties are induced upon the formation/disruption of Cu conducting filaments.•PEALD-AlN films have a great potential for the applications in 3D Re...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied surface science 2014-10, Vol.315, p.110-115
Hauptverfasser:	Zhang, Jian, Zhang, Qilong, Yang, Hui, Wu, Huayu, Zhou, Juehui, Hu, Liang
Format:	Artikel
Sprache:	eng
Schlagworte:	ALD AlN Aluminum nitride Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Conduction Copper Cross-disciplinary physics: materials science rheology Deposition Exact sciences and technology Filaments Physics Plasma-enhanced Random access memory ReRAM Resistive switching Switching Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!