Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
•AlN films were grown by plasma-enhanced atomic layer deposition.•Bipolar resistive switching properties were observed in Cu/PEALD-AlN/Pt devices.•The properties are induced upon the formation/disruption of Cu conducting filaments.•PEALD-AlN films have a great potential for the applications in 3D Re...
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| Veröffentlicht in: | Applied surface science 2014-10, Vol.315, p.110-115 |
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| creator | Zhang, Jian Zhang, Qilong Yang, Hui Wu, Huayu Zhou, Juehui Hu, Liang |
| description | •AlN films were grown by plasma-enhanced atomic layer deposition.•Bipolar resistive switching properties were observed in Cu/PEALD-AlN/Pt devices.•The properties are induced upon the formation/disruption of Cu conducting filaments.•PEALD-AlN films have a great potential for the applications in 3D ReRAM.
AlN thin films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate the resistive switching (RS) behavior. The bipolar RS properties were observed in the Cu/PEALD-AlN/Pt devices, which are induced upon the formation/disruption of Cu conducting filaments, as confirmed by the temperature dependent resistances relationships at different resistance states. The resistance ratio of the high and low resistance states (HRS/LRS) is 102–105. The dominant conduction mechanisms at HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. This study demonstrated that the PEALD-AlN films have a great potential for the applications in high-density resistance random access memory. |
| doi_str_mv | 10.1016/j.apsusc.2014.07.117 |
| format | Article |
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AlN thin films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate the resistive switching (RS) behavior. The bipolar RS properties were observed in the Cu/PEALD-AlN/Pt devices, which are induced upon the formation/disruption of Cu conducting filaments, as confirmed by the temperature dependent resistances relationships at different resistance states. The resistance ratio of the high and low resistance states (HRS/LRS) is 102–105. The dominant conduction mechanisms at HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. This study demonstrated that the PEALD-AlN films have a great potential for the applications in high-density resistance random access memory.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2014.07.117</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>ALD ; AlN ; Aluminum nitride ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Conduction ; Copper ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Exact sciences and technology ; Filaments ; Physics ; Plasma-enhanced ; Random access memory ; ReRAM ; Resistive switching ; Switching ; Thin films</subject><ispartof>Applied surface science, 2014-10, Vol.315, p.110-115</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-a3a4846225e81d1d9509ccb4f866a131f0a8eb02845cdde647b95b768fdd5f173</citedby><cites>FETCH-LOGICAL-c369t-a3a4846225e81d1d9509ccb4f866a131f0a8eb02845cdde647b95b768fdd5f173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2014.07.117$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28800322$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Jian</creatorcontrib><creatorcontrib>Zhang, Qilong</creatorcontrib><creatorcontrib>Yang, Hui</creatorcontrib><creatorcontrib>Wu, Huayu</creatorcontrib><creatorcontrib>Zhou, Juehui</creatorcontrib><creatorcontrib>Hu, Liang</creatorcontrib><title>Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition</title><title>Applied surface science</title><description>•AlN films were grown by plasma-enhanced atomic layer deposition.•Bipolar resistive switching properties were observed in Cu/PEALD-AlN/Pt devices.•The properties are induced upon the formation/disruption of Cu conducting filaments.•PEALD-AlN films have a great potential for the applications in 3D ReRAM.
AlN thin films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate the resistive switching (RS) behavior. The bipolar RS properties were observed in the Cu/PEALD-AlN/Pt devices, which are induced upon the formation/disruption of Cu conducting filaments, as confirmed by the temperature dependent resistances relationships at different resistance states. The resistance ratio of the high and low resistance states (HRS/LRS) is 102–105. The dominant conduction mechanisms at HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. This study demonstrated that the PEALD-AlN films have a great potential for the applications in high-density resistance random access memory.</description><subject>ALD</subject><subject>AlN</subject><subject>Aluminum nitride</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Conduction</subject><subject>Copper</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Exact sciences and technology</subject><subject>Filaments</subject><subject>Physics</subject><subject>Plasma-enhanced</subject><subject>Random access memory</subject><subject>ReRAM</subject><subject>Resistive switching</subject><subject>Switching</subject><subject>Thin films</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kMuO1DAQRS0EEs3AH7DwBolNgl9xnA3SMOIx0gg2sLYcu0y75cTBlR7Uf0-aHljOqqSqU3XrXkJec9ZyxvW7Q-sWPKJvBeOqZX3Lef-E7LjpZdN1Rj0luw0bGiWleE5eIB4Y42Kb7sj-Q1pKdpVWwIRrugeKv9Pq92n-SZdaFqhrAqQl0uv8lcaUJ6QBloJphUDHE12yw8k1MO_d7LeWW8uUPM3uBPUfmcr8kjyLLiO8eqhX5Menj99vvjR33z7f3lzfNV7qYW2cdMooLUQHhgceho4N3o8qGq0dlzwyZ2BkwqjOhwBa9ePQjb02MYQu8l5ekbeXu9vzv46Aq50SesjZzVCOaLnuuOylGvSGqgvqa0GsEO1S0-TqyXJmz8Hag70Ea8_BWtZb_lfhzYOCQ-9yrJvvhP93hTGMSSE27v2Fg83ufYJq0Sc4Z5Qq-NWGkh4X-gN-xpJV</recordid><startdate>20141001</startdate><enddate>20141001</enddate><creator>Zhang, Jian</creator><creator>Zhang, Qilong</creator><creator>Yang, Hui</creator><creator>Wu, Huayu</creator><creator>Zhou, Juehui</creator><creator>Hu, Liang</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141001</creationdate><title>Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition</title><author>Zhang, Jian ; Zhang, Qilong ; Yang, Hui ; Wu, Huayu ; Zhou, Juehui ; Hu, Liang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-a3a4846225e81d1d9509ccb4f866a131f0a8eb02845cdde647b95b768fdd5f173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALD</topic><topic>AlN</topic><topic>Aluminum nitride</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Conduction</topic><topic>Copper</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Exact sciences and technology</topic><topic>Filaments</topic><topic>Physics</topic><topic>Plasma-enhanced</topic><topic>Random access memory</topic><topic>ReRAM</topic><topic>Resistive switching</topic><topic>Switching</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Jian</creatorcontrib><creatorcontrib>Zhang, Qilong</creatorcontrib><creatorcontrib>Yang, Hui</creatorcontrib><creatorcontrib>Wu, Huayu</creatorcontrib><creatorcontrib>Zhou, Juehui</creatorcontrib><creatorcontrib>Hu, Liang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Jian</au><au>Zhang, Qilong</au><au>Yang, Hui</au><au>Wu, Huayu</au><au>Zhou, Juehui</au><au>Hu, Liang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition</atitle><jtitle>Applied surface science</jtitle><date>2014-10-01</date><risdate>2014</risdate><volume>315</volume><spage>110</spage><epage>115</epage><pages>110-115</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>•AlN films were grown by plasma-enhanced atomic layer deposition.•Bipolar resistive switching properties were observed in Cu/PEALD-AlN/Pt devices.•The properties are induced upon the formation/disruption of Cu conducting filaments.•PEALD-AlN films have a great potential for the applications in 3D ReRAM.
AlN thin films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate the resistive switching (RS) behavior. The bipolar RS properties were observed in the Cu/PEALD-AlN/Pt devices, which are induced upon the formation/disruption of Cu conducting filaments, as confirmed by the temperature dependent resistances relationships at different resistance states. The resistance ratio of the high and low resistance states (HRS/LRS) is 102–105. The dominant conduction mechanisms at HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. This study demonstrated that the PEALD-AlN films have a great potential for the applications in high-density resistance random access memory.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2014.07.117</doi><tpages>6</tpages></addata></record> |
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| subjects | ALD AlN Aluminum nitride Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Conduction Copper Cross-disciplinary physics: materials science rheology Deposition Exact sciences and technology Filaments Physics Plasma-enhanced Random access memory ReRAM Resistive switching Switching Thin films |
| title | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
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