Anomalous etching residues of sputter-deposited Ta upon reactive ion etching using chlorine-based plasmas
Anomalous etching of Ta which is sputter-deposited on silicon carbide (SiC) films is observed upon reactive ion etching (RIE) using a gas mixture of chlorine and chloroform. We find that α-Ta is hardly etched off by either chlorine-based plasmas or aqueous hydrofluoric acids (HF), while β-Ta is easi...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1992, Vol.31 (11B), p.L1625-L1627 |
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container_title | Japanese Journal of Applied Physics |
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creator | NAKAISHI, M YAMADA, M KONDO, K YAMABE, M SUGISHIMA, K |
description | Anomalous etching of Ta which is sputter-deposited on silicon carbide (SiC) films is observed upon reactive ion etching (RIE) using a gas mixture of chlorine and chloroform. We find that α-Ta is hardly etched off by either chlorine-based plasmas or aqueous hydrofluoric acids (HF), while β-Ta is easily etched off by the same methods. The extent of α-Ta depends on the surface treatment of SiC. The difference in chemical reactivity between the α phase and β phase is discussed using photoemission spectroscopy. |
doi_str_mv | 10.1143/jjap.31.l1625 |
format | Article |
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We find that α-Ta is hardly etched off by either chlorine-based plasmas or aqueous hydrofluoric acids (HF), while β-Ta is easily etched off by the same methods. The extent of α-Ta depends on the surface treatment of SiC. The difference in chemical reactivity between the α phase and β phase is discussed using photoemission spectroscopy.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.31.l1625</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Metals. 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We find that α-Ta is hardly etched off by either chlorine-based plasmas or aqueous hydrofluoric acids (HF), while β-Ta is easily etched off by the same methods. The extent of α-Ta depends on the surface treatment of SiC. The difference in chemical reactivity between the α phase and β phase is discussed using photoemission spectroscopy.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Metals. Metallurgy</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kM1LAzEQxYMoWKtH73sQb6mZTbJtjqX4VQp6qOdlNpu1KftlZlfwvzel1csMD37vwXuM3YKYASj5sN9jP5MwqyFL9RmbgFRzrkSmz9lEiBS4Mml6ya6I9lFmWsGE-WXbNVh3IyVusDvffibBkS9HR0lXJdSPw-ACL13fkR9cmWwxGfuujRTawX-7xEfxZx3pcO2u7oJvHS-QoqOvkRqka3ZRYU3u5vSn7OPpcbt64Zu359fVcsOtNGLgRQraahQC9QLmhSmhzOZKo7ElAKRSGgQnrJOgbAoLLIzQICpttFsoU2g5ZffH3D50X7HGkDeerKtrbF2smUOmoyPuNWX8CNrQEQVX5X3wDYafHER-APL1evmeS8g3h0Ejf3cKRrJYVwFb6-nfpFQmjQb5C-jPdwI</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>NAKAISHI, M</creator><creator>YAMADA, M</creator><creator>KONDO, K</creator><creator>YAMABE, M</creator><creator>SUGISHIMA, K</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1992</creationdate><title>Anomalous etching residues of sputter-deposited Ta upon reactive ion etching using chlorine-based plasmas</title><author>NAKAISHI, M ; YAMADA, M ; KONDO, K ; YAMABE, M ; SUGISHIMA, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-b215c5a00a5817b9d1d6745a9cd1112339a1e0ce314c218ab90510f595e849b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Metals. Metallurgy</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NAKAISHI, M</creatorcontrib><creatorcontrib>YAMADA, M</creatorcontrib><creatorcontrib>KONDO, K</creatorcontrib><creatorcontrib>YAMABE, M</creatorcontrib><creatorcontrib>SUGISHIMA, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NAKAISHI, M</au><au>YAMADA, M</au><au>KONDO, K</au><au>YAMABE, M</au><au>SUGISHIMA, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anomalous etching residues of sputter-deposited Ta upon reactive ion etching using chlorine-based plasmas</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1992</date><risdate>1992</risdate><volume>31</volume><issue>11B</issue><spage>L1625</spage><epage>L1627</epage><pages>L1625-L1627</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Anomalous etching of Ta which is sputter-deposited on silicon carbide (SiC) films is observed upon reactive ion etching (RIE) using a gas mixture of chlorine and chloroform. We find that α-Ta is hardly etched off by either chlorine-based plasmas or aqueous hydrofluoric acids (HF), while β-Ta is easily etched off by the same methods. The extent of α-Ta depends on the surface treatment of SiC. The difference in chemical reactivity between the α phase and β phase is discussed using photoemission spectroscopy.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.31.l1625</doi></addata></record> |
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subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Anomalous etching residues of sputter-deposited Ta upon reactive ion etching using chlorine-based plasmas |
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