Reduced power consumption in GaAsbased bipolar cascade lasers

Reduced power consumption in GaAsbased bipolar cascade lasers

In this paper, a systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n^sup +^ and p^sup +^ regions grown by MBE were investigated and the most promising designs were placed within the in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2002-10, Vol.38 (21), p.1-1
Hauptverfasser: Siskaninetz, W J, Ehret, J E, Dang, T N, Van Nostrand, J E, Lott, J A, Nelson, T R
Format: Artikel
Sprache:eng
Schlagworte:
Cascade lasers
Diodes
Electric potential
Gallium arsenide
Lasers
Lasing
Tunnel junctions
Voltage
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, a systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n^sup +^ and p^sup +^ regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.
ISSN:0013-5194
1350-911X