Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

A simple method is reported for the fabrication of AlN/GaN MOS-HEMTs. Ultra-thin Al^sub 2^O^sub 3^, which is formed using thermal oxidation of evaporated Al, was used for surface passivation and as a gate dielectric. Prior to the formation of Al^sub 2^O^sub 3^, Al protects the very sensitive AlN epi...

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Veröffentlicht in:	Electronics letters 2010-02, Vol.46 (4), p.1-1
Hauptverfasser:	Taking, S, Banerjee, A, Zhou, H, Li, X, Khokhar, A Z, Oxland, R, McGregor, I, Bentley, S, Rahman, F, Thayne, I, Dabiran, A M, Wowchak, A M, Cui, B, Wasige, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum nitride Drains Evaporation Gallium nitrides Gates Oxidation Passivation
Online-Zugang:	Volltext
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