Organic photovoltaic cells utilising ZnO electron extraction layers produced through thermal conversion of ZnSe
In this work, a thin ZnSe layer was deposited in a vacuum and then thermally annealed in air to provide an efficient electron extraction layer for an inverted organic photovoltaic (OPV) cell. Annealing the ZnSe film at 450 degree C (ZnSe sub((450 degree C))) increased the device performance and gave...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2014-10, Vol.2 (45), p.19201-19207 |
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container_title | Journal of materials chemistry. A, Materials for energy and sustainability |
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creator | New, Edward Hancox, Ian Rochford, Luke A Walker, Marc Dearden, Chloe Argent McConville, Chris F Jones, TimS |
description | In this work, a thin ZnSe layer was deposited in a vacuum and then thermally annealed in air to provide an efficient electron extraction layer for an inverted organic photovoltaic (OPV) cell. Annealing the ZnSe film at 450 degree C (ZnSe sub((450 degree C))) increased the device performance and gave an efficiency of 2.83%. X-ray photoelectron spectroscopy (XPS) measurements show that the increased device performance upon annealing at 450 degree C is due to the thermal conversion of ZnSe to ZnO. ZnO has a wider band gap than ZnSe, which allows for more light to reach the photoactive layer. The electronic structures of the treated ZnSe films were explored by ultraviolet photoemission spectroscopy (UPS) which showed that the ZnSe sub((450 degree C)) films had a Fermi level close to the conduction band edge, allowing for efficient electron extraction compared to the energetic barrier for extraction formed at the ZnSe sub((RT))/organic interface. |
doi_str_mv | 10.1039/c4ta04459b |
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The electronic structures of the treated ZnSe films were explored by ultraviolet photoemission spectroscopy (UPS) which showed that the ZnSe sub((450 degree C)) films had a Fermi level close to the conduction band edge, allowing for efficient electron extraction compared to the energetic barrier for extraction formed at the ZnSe sub((RT))/organic interface.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/c4ta04459b</identifier><language>eng</language><subject>Annealing ; Devices ; Extraction ; Photoelectron spectroscopy ; Photovoltaic cells ; Solar cells ; Zinc oxide ; Zinc selenides</subject><ispartof>Journal of materials chemistry. 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The electronic structures of the treated ZnSe films were explored by ultraviolet photoemission spectroscopy (UPS) which showed that the ZnSe sub((450 degree C)) films had a Fermi level close to the conduction band edge, allowing for efficient electron extraction compared to the energetic barrier for extraction formed at the ZnSe sub((RT))/organic interface.</abstract><doi>10.1039/c4ta04459b</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
subjects | Annealing Devices Extraction Photoelectron spectroscopy Photovoltaic cells Solar cells Zinc oxide Zinc selenides |
title | Organic photovoltaic cells utilising ZnO electron extraction layers produced through thermal conversion of ZnSe |
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