Full/partial depletion effects in FinFETs

Effects that are found exclusively in partially depleted or fully depleted, SOI MOSFETs are shown to appear simultaneously in n-channel FinFETs. The gate-induced floating body effect is normally observed in partially depleted devices only, while ideal subthreshold slope is an exclusive trademark of...

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Bibliographische Detailangaben

Veröffentlicht in:	Electronics letters 2005-04, Vol.41 (8), p.1-1
Hauptverfasser:	Xiong, W, Cleavelin, C Rinn, Wise, R, Yu, S, Pas, M, Zaman, R J, Gostkowski, M, Matthews, K, Maleville, C, Patruno, P, King, T-J, Colinge, J P
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Depletion Devices MOSFETs Semiconductor devices Slopes Trademarks
Online-Zugang:	Volltext
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