Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
•Soft X-ray was used to study the surface chemistry of GaN and AlGaN.•The surface chemistry and sensor behaviour were investigated.•The oxide of aluminum is significantly more reactive than gallium.•The Cl− ions are greater in GaN samples compared to AlGaN samples. Soft X-ray photoelectron spectrosc...
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Veröffentlicht in: | Applied surface science 2014-09, Vol.314, p.850-857 |
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creator | Khir, Farah Liyana Muhammad Myers, Matthew Podolska, Anna Sanders, Tarun Maruthi Baker, Murray V. Nener, Brett D. Parish, Giacinta |
description | •Soft X-ray was used to study the surface chemistry of GaN and AlGaN.•The surface chemistry and sensor behaviour were investigated.•The oxide of aluminum is significantly more reactive than gallium.•The Cl− ions are greater in GaN samples compared to AlGaN samples.
Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials. |
doi_str_mv | 10.1016/j.apsusc.2014.07.002 |
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Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2014.07.002</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>AlGaN ; Aluminum gallium nitrides ; Chemical sensor ; Chloride ions ; Cl− ions ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Gallium nitrides ; GaN ; Oxide layer ; Oxides ; Physics ; Sensors ; Surface chemistry ; X-ray photoelectron spectroscopy ; XPS</subject><ispartof>Applied surface science, 2014-09, Vol.314, p.850-857</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c448t-756dae2e30a4422ba2f4799055ae69dd88c3b502cfa77569ad35ebaf7bba53fe3</citedby><cites>FETCH-LOGICAL-c448t-756dae2e30a4422ba2f4799055ae69dd88c3b502cfa77569ad35ebaf7bba53fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0169433214015050$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28744320$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Khir, Farah Liyana Muhammad</creatorcontrib><creatorcontrib>Myers, Matthew</creatorcontrib><creatorcontrib>Podolska, Anna</creatorcontrib><creatorcontrib>Sanders, Tarun Maruthi</creatorcontrib><creatorcontrib>Baker, Murray V.</creatorcontrib><creatorcontrib>Nener, Brett D.</creatorcontrib><creatorcontrib>Parish, Giacinta</creatorcontrib><title>Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour</title><title>Applied surface science</title><description>•Soft X-ray was used to study the surface chemistry of GaN and AlGaN.•The surface chemistry and sensor behaviour were investigated.•The oxide of aluminum is significantly more reactive than gallium.•The Cl− ions are greater in GaN samples compared to AlGaN samples.
Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.</description><subject>AlGaN</subject><subject>Aluminum gallium nitrides</subject><subject>Chemical sensor</subject><subject>Chloride ions</subject><subject>Cl− ions</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Oxide layer</subject><subject>Oxides</subject><subject>Physics</subject><subject>Sensors</subject><subject>Surface chemistry</subject><subject>X-ray photoelectron spectroscopy</subject><subject>XPS</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kEtrFEEQgAdRyBr9Bzn0RfAyY08_5nERQjBRCCokAW9NTXc128vs9NrVE9h_b68bPHqqgvrq9VXVVcublrfdp10DB1rJNoK3quF9w7l4VW3aoZe11oN6XW0KNtZKSnFRvSXacd6KUt1U-4fjYrcp5hSXegJCx379fGCUVxeQWPTser6D7wwWx06R1uTBIrNb3AfK6fi3EjKxhDPkEBfahgPLkZWUES4UE5twC88hruld9cbDTPj-JV5WT7dfHm--1vc_7r7dXN_XVqkh173uHKBAyUEpISYQXvXjyLUG7EbnhsHKSXNhPfSFHcFJjRP4fppAS4_ysvp4nntI8feKlE051uI8w4JxJdN2ZazodNcXVJ1RmyJRQm8OKewhHU3Lzcmu2ZmzXXOya3hvit3S9uFlA5CF2SdYbKB_vUWuUlLwwn0-c1jefQ6YDNmAi0UXEtpsXAz_X_QHkGmTpw</recordid><startdate>20140930</startdate><enddate>20140930</enddate><creator>Khir, Farah Liyana Muhammad</creator><creator>Myers, Matthew</creator><creator>Podolska, Anna</creator><creator>Sanders, Tarun Maruthi</creator><creator>Baker, Murray V.</creator><creator>Nener, Brett D.</creator><creator>Parish, Giacinta</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140930</creationdate><title>Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour</title><author>Khir, Farah Liyana Muhammad ; Myers, Matthew ; Podolska, Anna ; Sanders, Tarun Maruthi ; Baker, Murray V. ; Nener, Brett D. ; Parish, Giacinta</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c448t-756dae2e30a4422ba2f4799055ae69dd88c3b502cfa77569ad35ebaf7bba53fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>AlGaN</topic><topic>Aluminum gallium nitrides</topic><topic>Chemical sensor</topic><topic>Chloride ions</topic><topic>Cl− ions</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Oxide layer</topic><topic>Oxides</topic><topic>Physics</topic><topic>Sensors</topic><topic>Surface chemistry</topic><topic>X-ray photoelectron spectroscopy</topic><topic>XPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khir, Farah Liyana Muhammad</creatorcontrib><creatorcontrib>Myers, Matthew</creatorcontrib><creatorcontrib>Podolska, Anna</creatorcontrib><creatorcontrib>Sanders, Tarun Maruthi</creatorcontrib><creatorcontrib>Baker, Murray V.</creatorcontrib><creatorcontrib>Nener, Brett D.</creatorcontrib><creatorcontrib>Parish, Giacinta</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khir, Farah Liyana Muhammad</au><au>Myers, Matthew</au><au>Podolska, Anna</au><au>Sanders, Tarun Maruthi</au><au>Baker, Murray V.</au><au>Nener, Brett D.</au><au>Parish, Giacinta</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour</atitle><jtitle>Applied surface science</jtitle><date>2014-09-30</date><risdate>2014</risdate><volume>314</volume><spage>850</spage><epage>857</epage><pages>850-857</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>•Soft X-ray was used to study the surface chemistry of GaN and AlGaN.•The surface chemistry and sensor behaviour were investigated.•The oxide of aluminum is significantly more reactive than gallium.•The Cl− ions are greater in GaN samples compared to AlGaN samples.
Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2014.07.002</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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subjects | AlGaN Aluminum gallium nitrides Chemical sensor Chloride ions Cl− ions Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Gallium nitrides GaN Oxide layer Oxides Physics Sensors Surface chemistry X-ray photoelectron spectroscopy XPS |
title | Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour |
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