Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

•Soft X-ray was used to study the surface chemistry of GaN and AlGaN.•The surface chemistry and sensor behaviour were investigated.•The oxide of aluminum is significantly more reactive than gallium.•The Cl− ions are greater in GaN samples compared to AlGaN samples. Soft X-ray photoelectron spectrosc...

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Veröffentlicht in:Applied surface science 2014-09, Vol.314, p.850-857
Hauptverfasser: Khir, Farah Liyana Muhammad, Myers, Matthew, Podolska, Anna, Sanders, Tarun Maruthi, Baker, Murray V., Nener, Brett D., Parish, Giacinta
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container_issue
container_start_page 850
container_title Applied surface science
container_volume 314
creator Khir, Farah Liyana Muhammad
Myers, Matthew
Podolska, Anna
Sanders, Tarun Maruthi
Baker, Murray V.
Nener, Brett D.
Parish, Giacinta
description •Soft X-ray was used to study the surface chemistry of GaN and AlGaN.•The surface chemistry and sensor behaviour were investigated.•The oxide of aluminum is significantly more reactive than gallium.•The Cl− ions are greater in GaN samples compared to AlGaN samples. Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. For GaN and AlGaN surfaces, a linear response (e.g. source-drain current) is typically seen with variation in pH of buffered solutions with constant reference electrode voltage at the surface gate; however, an inverted bath-tub type response (e.g. a maximum at neutral pH and lower values at pH values away from neutral) and a general tendency to negative charge selectivity has been also widely reported. We have shown that our XPS investigations are consistent with the different sensor response reported in the literature for these CHEMFET devices and may help to explain the differing response of these materials.
doi_str_mv 10.1016/j.apsusc.2014.07.002
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Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of both AlGaN and GaN surfaces in the context of understanding the behaviour of AlGaN/GaN heterostructures as chemical field-effect transistor (CHEMFET) ion sensors. AlGaN and GaN samples were subjected to different methods of oxide growth (native oxide and thermally grown oxide) and chemical treatment conditions. Our investigations indicate that the etching of the oxide layer is more pronounced with AlGaN compared to GaN. Also, we observed that chloride ions have a greater tendency to attach to the GaN surface relative to the AlGaN surface. Furthermore, chloride ions are comparatively more prevalent on surfaces treated with 5% HCl acid solution. The concentration of chloride ions is even higher on the HCl treated native oxide surface resulting in a very clear deconvolution of the Cl 2p1/2 and Cl 2p3/2 peaks. 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subjects AlGaN
Aluminum gallium nitrides
Chemical sensor
Chloride ions
Cl− ions
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Gallium nitrides
GaN
Oxide layer
Oxides
Physics
Sensors
Surface chemistry
X-ray photoelectron spectroscopy
XPS
title Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
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