A study on the variation of c-Si solar cell parameters under 8 MeV electron irradiation
This paper reports on the photon and 8 MeV electron irradiation effects on electrical parameters, quantum efficiency and minority carrier lifetime of a c-Si solar cell. The effect of subsequent photon irradiation on the silicon solar cells, degraded by 8 MeV electron irradiation is also investigated...
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| Veröffentlicht in: | Solar energy materials and solar cells 2014, Vol.120, p.191-196 |
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| container_title | Solar energy materials and solar cells |
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| creator | SATHYANARAYANA BHAT, P RAO, Asha KRISHNAN, Sheeja SANJEEV, Ganesh PUTHANVEETTIL, Suresh E |
| description | This paper reports on the photon and 8 MeV electron irradiation effects on electrical parameters, quantum efficiency and minority carrier lifetime of a c-Si solar cell. The effect of subsequent photon irradiation on the silicon solar cells, degraded by 8 MeV electron irradiation is also investigated. The current-voltage (I-V) characteristics of solar cells under AMO illumination condition were studied before and after the irradiation. The solar cell parameters such as short circuit current (I sub(sc)), open circuit voltage (V sub(oc)), fill factor (FF), and conversion efficiency ([eta]) were found to decrease after electron irradiation. A slight improvement in the electric performance of solar cells is observed after the photon irradiation. The spectral response shows that the quantum efficiency for low energy photons is reduced, suggesting that the damage is mainly inflicted to the bulk of the absorber material. This is strongly supported by the minority carrier lifetime results, which show a clear trend of decreasing carrier lifetime and carrier diffusion length as radiation dose increases. |
| doi_str_mv | 10.1016/j.solmat.2013.08.043 |
| format | Article |
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The effect of subsequent photon irradiation on the silicon solar cells, degraded by 8 MeV electron irradiation is also investigated. The current-voltage (I-V) characteristics of solar cells under AMO illumination condition were studied before and after the irradiation. The solar cell parameters such as short circuit current (I sub(sc)), open circuit voltage (V sub(oc)), fill factor (FF), and conversion efficiency ([eta]) were found to decrease after electron irradiation. A slight improvement in the electric performance of solar cells is observed after the photon irradiation. The spectral response shows that the quantum efficiency for low energy photons is reduced, suggesting that the damage is mainly inflicted to the bulk of the absorber material. This is strongly supported by the minority carrier lifetime results, which show a clear trend of decreasing carrier lifetime and carrier diffusion length as radiation dose increases.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2013.08.043</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Applied sciences ; Direct energy conversion and energy accumulation ; Electrical engineering. Electrical power engineering ; Electrical power engineering ; Electron irradiation ; Energy ; Exact sciences and technology ; Irradiation ; Minority carriers ; Natural energy ; Photoelectric conversion ; Photons ; Photovoltaic cells ; Photovoltaic conversion ; Quantum efficiency ; Solar cells ; Solar cells. 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The effect of subsequent photon irradiation on the silicon solar cells, degraded by 8 MeV electron irradiation is also investigated. The current-voltage (I-V) characteristics of solar cells under AMO illumination condition were studied before and after the irradiation. The solar cell parameters such as short circuit current (I sub(sc)), open circuit voltage (V sub(oc)), fill factor (FF), and conversion efficiency ([eta]) were found to decrease after electron irradiation. A slight improvement in the electric performance of solar cells is observed after the photon irradiation. The spectral response shows that the quantum efficiency for low energy photons is reduced, suggesting that the damage is mainly inflicted to the bulk of the absorber material. This is strongly supported by the minority carrier lifetime results, which show a clear trend of decreasing carrier lifetime and carrier diffusion length as radiation dose increases.</description><subject>Applied sciences</subject><subject>Direct energy conversion and energy accumulation</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrical power engineering</subject><subject>Electron irradiation</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Irradiation</subject><subject>Minority carriers</subject><subject>Natural energy</subject><subject>Photoelectric conversion</subject><subject>Photons</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Quantum efficiency</subject><subject>Solar cells</subject><subject>Solar cells. 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The effect of subsequent photon irradiation on the silicon solar cells, degraded by 8 MeV electron irradiation is also investigated. The current-voltage (I-V) characteristics of solar cells under AMO illumination condition were studied before and after the irradiation. The solar cell parameters such as short circuit current (I sub(sc)), open circuit voltage (V sub(oc)), fill factor (FF), and conversion efficiency ([eta]) were found to decrease after electron irradiation. A slight improvement in the electric performance of solar cells is observed after the photon irradiation. The spectral response shows that the quantum efficiency for low energy photons is reduced, suggesting that the damage is mainly inflicted to the bulk of the absorber material. This is strongly supported by the minority carrier lifetime results, which show a clear trend of decreasing carrier lifetime and carrier diffusion length as radiation dose increases.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.solmat.2013.08.043</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2014, Vol.120, p.191-196 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1642224319 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Direct energy conversion and energy accumulation Electrical engineering. Electrical power engineering Electrical power engineering Electron irradiation Energy Exact sciences and technology Irradiation Minority carriers Natural energy Photoelectric conversion Photons Photovoltaic cells Photovoltaic conversion Quantum efficiency Solar cells Solar cells. Photoelectrochemical cells Solar energy Volt-ampere characteristics |
| title | A study on the variation of c-Si solar cell parameters under 8 MeV electron irradiation |
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