The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition

•Nonpolar a-plane GaN with substrate nitridation was directly grown on r-plane sapphire by MOCVD.•The anisotropic surface morphology evolutions for the samples with and without nitridation process were investigated by controlled growth terminations.•The reasons responsible for the effects of growth...

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Veröffentlicht in:Applied surface science 2014-07, Vol.307, p.525-532
Hauptverfasser: Zhang, Jun, Tian, Wu, Wu, Feng, Wan, Qixin, Wang, Zhujuan, Zhang, Jin, Li, Yulian, Dai, Jiangnan, Fang, Yanyan, Wu, Zhihao, Chen, Changqing, Xu, Jintong, Li, Xiangyang
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Sprache:eng
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