The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition
•Nonpolar a-plane GaN with substrate nitridation was directly grown on r-plane sapphire by MOCVD.•The anisotropic surface morphology evolutions for the samples with and without nitridation process were investigated by controlled growth terminations.•The reasons responsible for the effects of growth...
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Veröffentlicht in: | Applied surface science 2014-07, Vol.307, p.525-532 |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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