Nickel ohmic contacts to p- and n-type 4H-SiC

The first demonstration of Ni ohmic contacts to both p^sup +^ and n^sup +^ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10^sup -4^ Ωcm^sup 2^ and 10^sup -6^ Ωcm^sup 2^ for p...

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Veröffentlicht in:	Electronics letters 2001-08, Vol.37 (17), p.1-1
Hauptverfasser:	Fursin, L G, Zhao, J H, Weiner, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact Contact resistance Ion implantation Nickel
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description	The first demonstration of Ni ohmic contacts to both p^sup +^ and n^sup +^ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10^sup -4^ Ωcm^sup 2^ and 10^sup -6^ Ωcm^sup 2^ for p^sup +^ and n^sup +^ 4H-SiC, respectively, have been determined by the transfer length method.
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Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10^sup -4^ Ωcm^sup 2^ and 10^sup -6^ Ωcm^sup 2^ for p^sup +^ and n^sup +^ 4H-SiC, respectively, have been determined by the transfer length method.</abstract><cop>Stevenage</cop><pub>John Wiley & Sons, Inc</pub><tpages>1</tpages></addata></record>
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subjects	Contact Contact resistance Ion implantation Nickel
title	Nickel ohmic contacts to p- and n-type 4H-SiC
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