Droop improvement in high current range on PSS-LEDs
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an outpu...
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| Veröffentlicht in: | Electronics letters 2011-03, Vol.47 (5), p.1-1 |
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| creator | Tanaka, S Zhao, Y Koslow, I Pan, C-C Chen, H-T Sonoda, J DenBaars, S P Nakamura, S |
| description | The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSSLED remains linear with an increasing drive current, even up to relatively high current density, and the EQE is almost constant. |
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| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1642213942</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3476937951</sourcerecordid><originalsourceid>FETCH-LOGICAL-p612-c579e3e2f0f3ae1af1c48b5cc5e70f8b3831ccd339dee75443da8f3d3cbdc13d3</originalsourceid><addsrcrecordid>eNpdjk9LwzAYh4MoOKffoeDFS6Bv3qRtjrLNP1BQ2A7eRpq-2TratCarn9-Injw9PPDw43fBFoAq5xrg45It8hyQK9Dymt3EeEoqtC4XDNdhHKesG6YwftFA_px1Pjt2h2Nm5xB-PBh_oGz02ft2y-vNOt6yK2f6SHd_XLLd02a3euH12_Pr6rHmUwGCW1VqQhIud2gIjAMrq0ZZq6jMXdVghWBti6hbolJJia2pHLZom9ZC4pI9_M6ma58zxfN-6KKlvjeexjnuoZBCAGopUnr_Lz2Nc_DpXKqg0rkoSsBvsuBPLQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1618902671</pqid></control><display><type>article</type><title>Droop improvement in high current range on PSS-LEDs</title><source>Alma/SFX Local Collection</source><creator>Tanaka, S ; Zhao, Y ; Koslow, I ; Pan, C-C ; Chen, H-T ; Sonoda, J ; DenBaars, S P ; Nakamura, S</creator><creatorcontrib>Tanaka, S ; Zhao, Y ; Koslow, I ; Pan, C-C ; Chen, H-T ; Sonoda, J ; DenBaars, S P ; Nakamura, S</creatorcontrib><description>The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSSLED remains linear with an increasing drive current, even up to relatively high current density, and the EQE is almost constant.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>Stevenage: John Wiley & Sons, Inc</publisher><subject>Constants ; Density ; Gallium nitrides ; High current ; Light-emitting diodes ; Packaging ; Wavelengths</subject><ispartof>Electronics letters, 2011-03, Vol.47 (5), p.1-1</ispartof><rights>Copyright The Institution of Engineering & Technology Mar 3, 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782</link.rule.ids></links><search><creatorcontrib>Tanaka, S</creatorcontrib><creatorcontrib>Zhao, Y</creatorcontrib><creatorcontrib>Koslow, I</creatorcontrib><creatorcontrib>Pan, C-C</creatorcontrib><creatorcontrib>Chen, H-T</creatorcontrib><creatorcontrib>Sonoda, J</creatorcontrib><creatorcontrib>DenBaars, S P</creatorcontrib><creatorcontrib>Nakamura, S</creatorcontrib><title>Droop improvement in high current range on PSS-LEDs</title><title>Electronics letters</title><description>The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSSLED remains linear with an increasing drive current, even up to relatively high current density, and the EQE is almost constant.</description><subject>Constants</subject><subject>Density</subject><subject>Gallium nitrides</subject><subject>High current</subject><subject>Light-emitting diodes</subject><subject>Packaging</subject><subject>Wavelengths</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNpdjk9LwzAYh4MoOKffoeDFS6Bv3qRtjrLNP1BQ2A7eRpq-2TratCarn9-Injw9PPDw43fBFoAq5xrg45It8hyQK9Dymt3EeEoqtC4XDNdhHKesG6YwftFA_px1Pjt2h2Nm5xB-PBh_oGz02ft2y-vNOt6yK2f6SHd_XLLd02a3euH12_Pr6rHmUwGCW1VqQhIud2gIjAMrq0ZZq6jMXdVghWBti6hbolJJia2pHLZom9ZC4pI9_M6ma58zxfN-6KKlvjeexjnuoZBCAGopUnr_Lz2Nc_DpXKqg0rkoSsBvsuBPLQ</recordid><startdate>20110303</startdate><enddate>20110303</enddate><creator>Tanaka, S</creator><creator>Zhao, Y</creator><creator>Koslow, I</creator><creator>Pan, C-C</creator><creator>Chen, H-T</creator><creator>Sonoda, J</creator><creator>DenBaars, S P</creator><creator>Nakamura, S</creator><general>John Wiley & Sons, Inc</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20110303</creationdate><title>Droop improvement in high current range on PSS-LEDs</title><author>Tanaka, S ; Zhao, Y ; Koslow, I ; Pan, C-C ; Chen, H-T ; Sonoda, J ; DenBaars, S P ; Nakamura, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p612-c579e3e2f0f3ae1af1c48b5cc5e70f8b3831ccd339dee75443da8f3d3cbdc13d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Constants</topic><topic>Density</topic><topic>Gallium nitrides</topic><topic>High current</topic><topic>Light-emitting diodes</topic><topic>Packaging</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tanaka, S</creatorcontrib><creatorcontrib>Zhao, Y</creatorcontrib><creatorcontrib>Koslow, I</creatorcontrib><creatorcontrib>Pan, C-C</creatorcontrib><creatorcontrib>Chen, H-T</creatorcontrib><creatorcontrib>Sonoda, J</creatorcontrib><creatorcontrib>DenBaars, S P</creatorcontrib><creatorcontrib>Nakamura, S</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanaka, S</au><au>Zhao, Y</au><au>Koslow, I</au><au>Pan, C-C</au><au>Chen, H-T</au><au>Sonoda, J</au><au>DenBaars, S P</au><au>Nakamura, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Droop improvement in high current range on PSS-LEDs</atitle><jtitle>Electronics letters</jtitle><date>2011-03-03</date><risdate>2011</risdate><volume>47</volume><issue>5</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0013-5194</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><abstract>The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSSLED remains linear with an increasing drive current, even up to relatively high current density, and the EQE is almost constant.</abstract><cop>Stevenage</cop><pub>John Wiley & Sons, Inc</pub><tpages>1</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2011-03, Vol.47 (5), p.1-1 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1642213942 |
| source | Alma/SFX Local Collection |
| subjects | Constants Density Gallium nitrides High current Light-emitting diodes Packaging Wavelengths |
| title | Droop improvement in high current range on PSS-LEDs |
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