Droop improvement in high current range on PSS-LEDs

Droop improvement in high current range on PSS-LEDs

The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an outpu...

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Veröffentlicht in:Electronics letters 2011-03, Vol.47 (5), p.1-1
Hauptverfasser: Tanaka, S, Zhao, Y, Koslow, I, Pan, C-C, Chen, H-T, Sonoda, J, DenBaars, S P, Nakamura, S
Format: Artikel
Sprache:eng
Schlagworte:
Constants
Density
Gallium nitrides
High current
Light-emitting diodes
Packaging
Wavelengths
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Zusammenfassung:The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9% to 7.6%. At a wavelength of 447 nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6 mW and an EQE of 49.7% at a current of 20 mA. The output power of the 9QW PSSLED remains linear with an increasing drive current, even up to relatively high current density, and the EQE is almost constant.
ISSN:0013-5194
1350-911X