Diffusion suppression in vapor–liquid–solid Si nanowire growth by a barrier layer between the Au catalyst and substrate

Nanowires have attracted significant interest because of their unique characteristics. Vapor–liquid–solid (VLS) growth is the standard method for fabricating nanowires and Au is the most commonly used catalyst. However, Au catalyst droplets diffuse over the Si substrate surface with a high migration velocity and agglomerate at relatively low temperatures. In our previous work, we reported a significant improvement in the positioning and diameter distribution of VLS-grown Si nanowires by inserting a diffusion barrier layer and concluded that the barrier layer suppressed the formation of AuSi eutectic droplets and prevented the droplets diffusing on the substrate surface during nucleation. In the present study, we analyzed the nucleation of the Au catalyst and examined its behavior during nucleation. Detailed multidirectional analysis and in situ observations confirmed that the formation and agglomeration of AuSi eutectic droplets was suppressed by the formation of a silicide layer. This because of the higher reaction temperatures between the diffusion barrier and the substrate silicon, and between the catalyst and the diffusion barrier, compared with the reaction between the Au catalyst and substrate silicon. •The effect of a diffusion barrier layer on VLS nanowire growth is analyzed.•In situ SEM shows the effect of the diffusion barrier during nucleation.•Eutectic phase formation and agglomeration is stopped by silicide layer formation.•Caused by higher reaction temperature of barrier with catalyst and substrate.